Robert Boschgmbh

Frank Bantien

Jiri Marek

Michael Offenberg

Kurt Weiblen

Horst Muenzel

Eckart Reihlen

Franz Laermer

Uwe Konzelmann

Andrea Schilp

Botho Ziegenbein

Josef Kleinhans

Guenther Findler

Gerhard Benz

Martin Willmann

Werner Herden

Helmut Baumann

Hans-Peter Trah

Rolf Becker

Matthias Kuesell

Steffen Schmidt

Udo Jauernig

Dietmar Haack

Klaus Jaeckel

Martin Warth

A method for manufacturing sensors from a multilayer plate with upper and lower monocrystalline silicon layers and an etching layer between them. The upper silicon layer is structured by the introduction of troughs therein extending down to the etching layer. Sensor structures, such as a bending beam that is used in an acceleration sensor, are created by etching the etching layer beneath a part of the silicon layer structured in this manner.

Method of manufacturing sensor

Silicon chip for use in a force-detection sensor

A contacting of a capacitive accelerometer sensor of monocrystalline material is achieved by a capacitive accelerometer sensor having a structure etched out of a monocrystalline layer arranged on a substrate, including a seismic mass that is only joined to the substrate by suspension segments and executing a movement in its longitudinal direction in response to the occurrence of an acceleration of parallel, plate-like first fingers extending out from this mass at right angles to their longitudinal direction and of plate-like second fingers running parallel to the first fingers and anchored to the substrate. The first and second fingers form a capacitor arrangement. The suspension segments, which are anchored with their end region that is distant from the seismic mass to the substrate, and second fingers are electrically isolated, by an isolation strip, from the other remaining layer of monocrystalline material. A passivation layer extends over the isolation strip, and at least partially over the remaining layer. Conductors arranged on the passivation layer and serving as connecting leads for the capacitor arrangement extend across the isolation strip up to the connections of the capacitor arrangement, and are contacted there.

Capacitive accelerometer sensor and method for its manufacture

A method for manufacturing micro-mechanical components in which a structure is produced on a silicon layer, which is to be undercut in a further step. The silicon is selectively anodized for this undercutting operation. Thus, the method enables the manufacturing of micro-mechanical components that can be integrated together with bipolar circuit elements.

Method for manufacturing micro-mechanical components using selective

A mass flow sensor includes a measuring element arranged on a membrane that is clamped in a frame. The sensor is formed by introducing a recess into a silicon wafer. Through the application of a recess having perpendicular walls, the thickness of the frame can be reduced, thus allowing the required surface area of the wafer to also be reduced.

Mass flow sensor having a measuring element arranged on a membrane

A mass-flow sensor includes a measuring element on a membrane and a media-temperature measuring element on a separate membrane. By configuring the media-temperature measuring element on a membrane, the mass-flow sensor quickly reacts to changes in the temperature of the flowing medium.

Mass-flow sensor

An improved temperature sensor is designed for the sensitive detection of temperature changes. The temperature sensor includes a frame 9 of monocrystalline silicon and a dielectric diaphragm 13 stretched on it. A monocrystalline silicon structure 35 is disposed on or under the dielectric diaphragm which is used for measuring the temperature. In the course of this, the Seebeck effect, as well as the temperature dependence of the electrical resistance, can be used for detection of any temperature changes.

Temperature sensor

A method is proposed for assembling micromechanical sensors, in particular Hall sensors, or pressure or acceleration sensors, in which at least one silicon sensor element is applied to a substrate. The at least one silicon sensor element is joined to the substrate via at least one assembly pedestal, the cap faces of which are kept small compared with the surface of the silicon sensor element, so that a gap exists between the substrate and the silicon sensor element except for the region of the at least one assembly pedestal.

Method of assembling micromechanical sensors

A valve for metering a fluid including a small upper plate, a small middle plate and a small lower plate. The small middle plate has a closing element with a diaphragm region surrounding the closing element. The stroke of the closing element is limited in an axial direction by the small upper plate and by a valve seat of the small lower plate. As a result, very accurate metering of the fluid is possible. The valve is especially suitable as an injection valve for injection systems of mixture-compressing internal combustion engines with externally supplied ignition.

Valve

A sensor for measuring pressure and acceleration is proposed; it has a monocrystalline silicon substrate (10) with a succession of thin films applied to its first primary surface. A deflectable membrane (12) in a frame (11) is structured out of the silicon substrate (10), and the membrane (12) is formed in the first primary surface. The membrane (12) has a reinforcement zone. In the succession of thin films that is applied to the first primary surface, there is a structure (50) having at least one first substructure, which is disposed parallel to the first primary surface of the silicon substrate (10). There is a gap between the first substructure and the silicon substrate (10). The first substructure is joined to the membrane (12) in the region of the reinforcement zone. It protrudes past the membrane (12) and extends at least partway over the frame (11). This first substructure forms one electrode of a capacitor. At least one first counterelectrode (161, 162) of the capacitor is disposed opposite the first substructure, in the region of the frame (11).

Sensor

A semiconductor plate having an epitaxial layer of a conductivity type opposite to that of the substrate on which it is formed has a depression, including one or more elongate channels. The depression is etched into a depth passing entirely through the epitaxial layer to isolate at least one tongue extending from a tongue pedestal into the etched depression and having parallel major sides which are perpendicular to the principal planes of the semiconductor plate. The tongue is under-etched so that it will be free to vibrate by motion in directions parallel to the principal planes of the plate. One of the major sides of the tongue faces a stationary electrode across a gap and the electrode and the tongue are insulated from each other, at least in one embodiment, by the fact that the etched depression extends all the way through the epitaxial layer in its depth. Deflection or vibration of the tongue changes the capacitance between the electrode and the tongue and contacts are provided for measuring the capacitance. Various embodiments utilizing multiple tongues and one or more electrodes are shown.

Acceleration and vibration sensor and method of making the same

A sensor for measurement of tilt or inclination angle features a sensor element made from a monocrystalline silicon wafer, from which is etched at least one movable silicon mass. The silicon mass is freed from the surrounding wafer by an etch groove which completely penetrates the silicon wafer, and is connected to the silicon wafer by two bars lying in a common axis, so that, upon flexing or torsioning of the bars, the silicon mass is movable or rotatable about the axis of the bars. The sensor element is connected with an upper and/or a lower cover. On at least one of the covers, adjacent the silicon mass, at least two electrodes are placed. The silicon mass and the two electrodes form a pair of capacitances, and the movement or excursion of the silicon mass is detected by evaluation of the difference between the capacitances.

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Ditzingen, Germany

Frank Bantien