Stmicroelectronics S.a.

Stmicroelectronics (crolles 2) Sas

François Guyader

Richard P Fournel

François Roy

Frédéric Gianesello

Nicolas Hotellier

Vincent Fiori

Franck Arnaud

A global shutter image sensor of a back-illuminated type includes a semiconductor substrate and pixels. Each pixel includes a photosensitive area, a storage area, a readout area and areas for transferring charges between these different areas. The image sensor includes, for each pixel, a protector extending at least partly into the substrate from the back of the substrate to ensure that the storage area is protected against back illumination.

Back-illuminated global-shutter image sensor

An electronic device has a rear plate that includes a substrate rear layer, a substrate front layer and a dielectric intermediate layer between the substrate rear and front layers. An electronic structure is on the substrate front layer and includes electronic components and electrical connections. The substrate rear layer includes a solid local region and a hollowed-out local region. The hollowed-out local region extends over all of the substrate rear layer. The substrate rear layer does not cover at least one local zone of the dielectric intermediate layer corresponding to the hollowed-out local region.

Electronic device with hollowed-out rear plate

The invention concerns a method for forming, in a substrate () having a first type of conductivity, a MOS transistor, comprising the following steps: a) forming on the substrate an insulated gate (); b) implanting a doping agent having a second type of conductivity; c) forming on the edges of the gate silicon nitride spacers; d) simultaneously oxidising the apparent surfaces of the substrate, the gate and the spacers; and e) drain and source implantation.

LDD-type miniaturized MOS transistors

Growing community of inventors

Montbonnot, France

François Guyader