Thomson Hybrides Et Microondes

Francoise Rambier

Daniel Delagebeaudeuf

Pierre Gibeau

Jean J Godard

A microwave transistor made with group III-V materials, such as GaAs and AlGaAs, is disclosed. This transistor essentially comprises a double heterojunction formed by a first layer of material with a big forbidden gap, n doped for example, a second non-doped layer with a narrow forbidden gap and a third p doped layer with a wide forbidden gap. Under the effect of the electrical field, there may be formed, simultaneously or not simultaneously, in the second layer, a two-dimensional electron gas at the interface with the first layer and a two-dimensional hole gas at the interface with the third layer. By bringing the thickness of the layers into play, the characteristics of the n and p channels can be made symmetrical.

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Orsay, France

Francoise Rambier