U.S. Philips Corporation

Francoise Groliere

Pierre Dolizy

Charlotte Jay

Jonas Krober

Francois Maniguet

Olivier O Khan

Renee Claude

Spin-transition parent compounds

A photoelectric detection structure of the present invention comprises a photosensitive layer deposited on a substrate consisting of a material transparent to radiation of visible light and of the near infrared light. The substrate has a refractive index for this radiation in the order of 2 with the substrate comprising on its surface incident to the radiation a structure to reduce the reflection of the radiation on that surface.

Photoelectric detection structure having substrate with controlled

The photoelectric device comprises a photosensitive layer on a substrate which is transparent to incident radiation. An intermediate layer for optically adapting the photosensitive layer to the substrate is provided therebetween. The respective thicknesses of the intermediate layer and the photosensitive layer are proportioned so that photon absorption takes place in the photosensitive layer near the output of the layer within a distance on the order of magnitude of the escaping depth of the electrons. Photon absorption takes place in such manner that the efficiency of the photoemission of the structure is optimum taking into account the nature of the materials of the layers.

Photoelectric detection structure

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Nogent-Sur-Marne, France

Francoise Groliere