Globalfoundries Inc.

Francois Weisbuch

Rolf Seltmann

Stefan Roling

Methods for selecting the best measurement sites for OPC model calibration are disclosed. Embodiments include selecting a predetermined number, n, of structures representing an IC design layout eligible for SEM measurement; specifying an image parameter space of image parameters for the n structures; optimizing a redundancy in the image parameter space of measurement sites for the n structures; and calibrating an OPC model for the IC design layout based on the optimized redundancy.

Sampling for OPC building

Sampling for OPC model building

A method of determining an average contour of a patterned feature on a wafer includes providing a reference contour corresponding to the patterned feature on the wafer, providing a plurality of images of the patterned feature, extracting from the plurality of images a plurality of extracted contours that represent the patterned feature, eliminating flyers from the plurality of extracted contours, and generating the average contour of the patterned feature based on the extracted contours remaining after elimination of the flyers.

Methods and media for averaging contours of wafer feature edges

Variations in critical dimensions of circuit features of sophisticated semiconductor devices may be reduced by efficiently extracting mask and/or imaging tool specific non-uniformities with high spatial resolution by using measured intensity values and simulated intensity values. For example, a tool internal radiation sensor may be used for measuring the intensity of an image of a lithography mask, while a simulated intensity enables eliminating the mask pattern specific intensity contributions. In this manner, high spatial resolution of the corresponding correction map may be obtained without undue effort in terms of man power and measurement tool resources.

Control of critical dimensions in optical imaging processes for semiconductor production by extracting imaging imperfections on the basis of imaging tool specific intensity measurements and simulations

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Dresden, Germany

Francois Weisbuch