Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Thales

Idemia Identity & Security France

Centre National De La Recherche Scientifique

François Templier

Jean-François Mainguet

Salim Boutami

Marc Rabarot

Ivan-Christophe Robin

Frank Fournel

Fabrice Casset

Tony Maindron

Umberto Rossini

Laurent Clavelier

Lamine Benaissa

Christophe Martinez

Stéphane Caplet

Bruno Mourey

Alexei Tchelnokov

Thomas Bordy

Josep Segura Puchades

Sébastien Becker

Francois-Henri Luc

Etienne Quesnel

Emeric De Foucauld

Guy Feuillet

Roch Espiau De Lamaestre

Bertrand Dupont

Cédric Allier

Jérôme Boutet

Benoit Racine

Jesus Zuniga Perez

Philippe Vennegues

Aurélien Suhm

Séverine Cheramy

Joël Yann Fourre

Margaux Vigier

Edouard Siekierski

Stéphane Altazin

Jérémy Bilde

Hélène Bourvon

François-Henri Luc

A method for manufacturing an optoelectronic device including an array of diodes and an array of colour conversion portions includes providing the array of diodes, and the upper electrode layers; depositing a dielectric layer having a substantially zero surface potential; applying a potential difference between an electrode and the first upper electrode layers, resulting in the formation of first patterns with non-zero surface potential in the dielectric layer; and producing the first colour conversion portions, by contacting the dielectric layer with a colloidal solution containing first photoluminescent particles.

Method for manufacturing a colour-conversion optoelectronic device, including a step of polarising an electret layer in a localised manner by means of the upper electrodes of the diodes

An optoelectronic device including at least an emissive component including at least a first electrode, a second electrode, and an emissive element disposed between an emissive face of the optoelectronic device and the second electrode, a photodetector component such that the second electrode of the emissive component is disposed between the photodetector component and the emissive element. The emissive component and the photodetector component are superimposed one above the other, and the second electrode has at least one hole passing through it, disposed vertically in line with at least a part of a detection surface of the photodetector component and/or a part of the detection surface of the photodetector component is not disposed vertically in line with the second electrode and form a ring located at the external edges of the detection surface of the photodetector component.

Optoelectronic device with superimposed emissive and photodetector components

An optoelectronic device manufacturing method, including the following successive steps: transferring an active inorganic photosensitive diode stack on an integrated control circuit previously formed inside and on top of a semiconductor substrate; and forming a plurality of organic light-emitting diodes on the active photosensitive diode stack.

Optoelectronic device manufacturing method

A method of manufacturing an optoelectronic device, including the steps of: a) arranging an active photosensitive diode stack on a first substrate; b) transferring the active photosensitive diode stack onto an integrated control circuit previously formed inside and on top of a second semiconductor substrate, and then removing the first substrate; c) arranging an active light-emitting diode stack on a third substrate; and d) after steps b) and c), transferring the active light-emitting diode stack onto the active photosensitive diode stack, and then removing the third substrate.

A method of manufacturing an optoelectronic device, including the steps of: a) arranging an active photosensitive diode stack on a first substrate; b) arranging an active light-emitting diode stack on a second substrate; c) after steps a) and b), transferring the active photosensitive diode stack onto the active light-emitting diode stack, and then removing the first substrate; and d) after step c), transferring the assembly comprising the active photosensitive diode stack and the active light-emitting diode stack onto an integrated control circuit previously formed inside and on top of a third substrate, and then removing the second substrate.

A method for producing an optoelectronic device having nitride-based microLEDs includes providing an assembly having at least one growth substrate and a nitride structure, where the nitride structure has a semipolar nitride layer that includes an active stack and crystallites extending from facets of the growth substrate with a crystalline orientation {111} to the first face of the semipolar nitride layer and providing an integrated control circuit featuring electric connection pads. The assembly is placed on the integrated control circuit, the growth substrate and the crystallites are removed, and trenches are formed in the stack so as to delimit a plurality of islets, each islet being configured to form a microLED.

Method for producing an optoelectronic device comprising microLEDs

The invention relates to a videoconferencing system, comprising:

Videoconferencing system allowing a parallax effect associated with the direction of the gaze of a user to be decreased

A display device including a first integrated circuit including: an assembly of light-emitting diodes, each diode including a vertical stack of a first semiconductor layer of a first conductivity type and of a second semiconductor layer of a second conductivity type; and on the side of a surface of the first circuit opposite to the first semiconductor layer, a connection structure including a dielectric layer having a plurality of identical or similar connection pads, regularly distributed across the entire surface of the first circuit, arranged therein, each diode having a first electrode in contact with at least one pad of the connection structure, and a second electrode in contact with a plurality of pads of the connection structure at the periphery of the plurality of diodes.

LED emissive display device and method for producing such a device

A display device includes a support and first and second conductive electrical power supply elements, the first conductive element being arranged on the support. The display device also includes LED modules, each including at least one LED and two electrical power supply pads that are arranged on two opposite faces, respectively, of the LED module, one of which corresponds to an emissive face of the LED. The electrical power supply pads of each LED module are connected to the first and second conductive electrical power supply elements, respectively, and the connection area of an electrical power supply pad of an LED module for connection with the first conductive electrical power supply element is smaller than a receiving area of the first conductive element corresponding to the area of the first conductive element in a parallel plane to the connection areas of the power supply pads of the LED modules.

LED display device

An optoelectronic device including an active area capable of supplying an electromagnetic radiation and sandwiched between first and second semiconductor layers, the first semiconductor layer delimiting a surface and including a first portion in contact with the active area and delimiting a first part of the surface and extending in a second portion delimiting a second part of the surface, the second portion forming a single-mode waveguide, the optoelectronic device including an opaque portion reflective for the electromagnetic radiation covering the first part and including a diffraction grating on the second part capable of extracting the electromagnetic radiation from the second portion.

Optoelectronic device with light-emitting diode with extraction enhancement

An optoelectronic device including an active area capable of supplying an electromagnetic radiation and sandwiched between first and second semiconductor layers, the first semiconductor layer delimiting a surface, the optoelectronic device further including a diffraction grating capable of extracting the electromagnetic radiation from the first semiconductor layer, the diffraction grating including holes extending in the first semiconductor layer from said surface, the width of the holes measured in a plane parallel to said surface increasing from a central portion of the diffraction grating to a peripheral portion of the diffraction grating.

A system for projecting images, configured to implement a sequential type colour projection. The system includes an emissive matrix display device; and a wavelength conversion coloration wheel. The coloration wheel includes a transparent zone, and a first photoluminescent zone configured to absorb a blue light beam and to emit in response a beam including a green component and a red component. The system further includes a selection device for blocking alternately the green component or the red component, including at least one dichroic mirror.

Colour projector with spectral conversion coloration wheel

A papillary print sensor is provided, including a light emitting device configured to emit light radiation towards the sensor; and a matrix photodetector configured to be sensitive to at least part of an emission spectrum of the light emitting device, the light emitting device and the matrix photodetector being distributed together in and/or above a same semiconducting substrate, the light emitting device being composed of at least one gallium nitride light emitting diode (LED) with a series of through openings.

Print sensor with gallium nitride LED

The invention relates to an image projection system () configured to implement colour projection comprising: a first matrix device () with an emissive display for transmitting a first and a second colour component of a colour image, wherein each pixel is adapted to transmit at the wavelengths associated with the first colour component and the wavelengths associated with the second colour component; and a second matrix device () with an emissive display for transmitting a third colour component () of the colour image. The colour image projector according to the invention offers both good energy efficiency and a small footprint.

Colour projector with two emissive displays

A monolithic display device including a plurality of first pixels capable of emitting light in a first wavelength range, and a plurality of second pixels capable of emitting light in a second wavelength range, the first pixels each including a gallium nitride light-emitting diode, and the second pixels each including an organic light-emitting diode.

Growing community of inventors

Grenoble, France

François Templier