Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique

Soitec

Francois Rieutord

Hubert Moriceau

Oleg Kononchuk

Shay Reboh

Didier Landru

Frank Fournel

Nadia Ben Mohamed

Frederic Mazen

Damien Massy

Laurent Grenouillet

Yves Morand

Yannick Le Tiec

Christophe Morales

Benoit Bataillou

Remi Beneyton

A useful layer is layered onto a support by a method that includes the steps of forming an embrittlement plane by implanting light elements into a first substrate, so as to form a useful layer between such plane and one surface of the first substrate; applying the support onto the surface of the first substrate so as to form an assembly to be fractured; applying a heat treatment for embrittling the assembly to be fractured; and initiating and propagating a fracture wave into the first substrate along the embrittlement plane. The fracture wave is initiated in a central area of the embrittlement plane and the propagation speed of the wave is controlled so that the velocity thereof is sufficient to cause the interactions of the fracture wave with acoustic vibrations emitted upon the initiation and/or propagation thereof, if any, are confined to a peripheral area of the useful layer.

Method for transferring a useful layer

A method for direct bonding between at least a first and a second substrate, each of the first and second substrates containing a first and a second main surface, the method including: a first thinning of the edges of the first substrate over at least one portion of the circumference of the first substrate, at the first main surface of the first substrate; and placing the second main surface of the first substrate in contact with the second main surface of the second substrate such that a bonding wave propagates between the first and second substrates, securing the first and second substrates to one another by direct bonding such that portions of the second main surface of the first substrate located below the thinned portions of the first main surface of the first substrate are secured to the second substrate.

Method for direct bonding of substrates including thinning of the edges of at least one of the two substrates

Method for creation of stressed channel structure transistors wherein at least one amorphizing ion implantation of the surface layer of a substrate of the semiconductor-on-insulator type is carried out through openings in a mask, so as to render zones of the surface layers amorphous and to induce relaxation of a zone intended to form a channel and located between the zones that have been rendered amorphous, the relaxation being carried out in a direction orthogonal to that in which it is intended that the channel current flows.

Method of fabricating a transistor channel structure with uniaxial strain

A method for transferring a useful layer onto a support includes the following processes: formation of a fragilization plane through the implantation of light species into a first substrate in such a way as to form a useful layer between this plane and a surface of the first substrate; application of the support onto the surface of the first substrate to form an assembly to be fractured having two exposed sides; thermal fragilization treatment of the assembly to be fractured; and initiation and self-sustained propagation of a fracture wave in the first substrate along the fragilization plane. At least one of the sides of the assembly to be fractured is in close contact, over a contact zone, with an absorbent element suitable for capturing and dissipating acoustic vibrations emitted during the initiation and/or propagation of the fracture wave.

The present invention relates to a process for direct bonding two substrates, comprising at least: (a) bringing the surfaces to be bonded of said substrates in close contact; and (b) propagating a bonding wave between said substrates, characterised in that said substrates are kept, during step (b), in an atmosphere of a gas having a negative Joule-Thomson coefficient at the temperature and pressure of said atmosphere.

Process for bonding in an atmosphere of a gas having a negative Joule-Thomson coefficient

The invention relates to a process for producing a bond between a first and a second substrate. The process includes preparing surfaces of the substrates to be assembled, and attaching the surfaces to form an assembly of these two surfaces, by direct molecular bonding. The assembly is then heat treated, which includes maintaining the temperature within the range of 50&#xb0; C. to 100&#xb0; C. for at least one hour.

Process for assembling substrates with low-temperature heat treatments

The invention relates to a monochromator device for selecting at least one wavelength band from incident radiation in a given wavelength range. The monochromator device may include at least one optical layer of a monocrystalline material having a crystallographic line that is adapted to the at least one wavelength band to be selected; and a mechanical substrate. The at least one optical layer and the mechanical substrate are assembled by molecular bonding.

X-Ray or neutron monochromator

The adhesion between two layers, in particular two thin layers of a microelectronic device, is a data item of importance. It was found that the closure ratio of the interface could be used, in non-destructive manner, to determine a measurement of bond energy. A method and a device using a magnitude characteristic of this length are described, in particular using low incidence X-ray reflection and electronic density at the interface.

Growing community of inventors

Saint Egreve, France

Francois Rieutord