Alcatel Lucent

Commissariat a L'energie Atomique Et Aux Energies Alternatives

François Lelarge

Romain Brenot

Nicolas Chimot

Francis Poingt

Mohand Achouche

Alain Accard

Frédéric Pommereau

Benjamin Rousseau

Siddharth Joshi

Christophe Caillaud

Genevieve Glastre Lemaitre

An emitting device is intended for delivering photons with a chosen wavelength. This emitting device includes an InP substrate with a directly modulated laser arranged for generating photons modulated by a non-return-to-zero modulation to produce data to be transmitted, a passive ring resonator monolithically integrated with the directly modulated laser and having a resonance amongst several ones that is used for filtering a zero level induced by the data modulation, and a tuning means arranged along the directly modulated laser and/or around the ring resonator to tune the photon wavelength and/or the ring resonator resonance used for filtering.

Tunable emitting device with a directly modulated laser coupled to a ring resonator

An optical filtering device () comprising: a ring resonator (); and a multimode interference coupler () comprising two inputs (), two outputs () and a multimode waveguide () connecting the two inputs to the two outputs, the coupler having a first input () serving as an input for the filtering device and able to receive an input optical signal (), and a first output () corresponding to the output of the filtering device and able to produce an output optical signal (),the ring resonator () being arranged so as to connect a second output () of the coupler to a second input () of the coupler,wherein the filtering device comprisesa tuning element () able to modify locally the refractive index in the coupling zone () of said multimode waveguide () in order to vary a coupling coefficient between the coupler () and the ring resonator ().

Ring resonator comprising optical filtering device

A monolithic integrated structure comprising a buried heterostructure semiconductor optical amplifier and a deep ridge optical receiver comprising such structure are disclosed.

Monolithic integrated structure comprising a buried heterostructure semiconductor optical amplifier and a photodetector

Method of manufacturing an optical device, and an optical device, the optical device having one or more layers () of quantum-dots located in-between barrier layers (). A spacer layer () is grown on a barrier layer (), such that the spacer layer () is adapted for substantially blocking strain fields induced by quantum-dot layers, thereby producing a smooth growth front for a subsequent barrier layer ().

Optical device having a quantum-dot structure

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Marcoussis, France

François Lelarge