Nxp B.v.

Francois Igor Neuilly

Johannes Josephus Theodorus Marinus Donkers

Petrus Hubertus Cornelis Magnee

Eddy Kunnen

A method for forming an epitaxial base layer in a bipolar device. The method comprises the steps of: providing a structure having a field isolation oxide region () adjacent to an active silicon region (); forming a silicon nitride/silicon stack () above the field isolation oxide region (), wherein the silicon nitride/silicon stack () includes a top layer of silicon () and a bottom layer of silicon nitride (); performing an etch to the silicon nitride/silicon stack () to form a stepped seed layer, wherein the top layer of silicon is etched laterally at the same time the bottom layer of silicon nitride is etched; and growing an Si/SiGe/Si stack () over the stepped seed layer and active region ().

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Helecine, Belgium

Francois Igor Neuilly