H.c. Starck Gmbh

Materion Newton Inc.

H.c. Starck Solutions Coldwater, LLC

Francois-Charles Dary

Paul R Aimone

Patrick Hogan

Shuwei Sun

Marc Abouaf

Qi Zhang

David B Smathers

Steven Alfred Miller

Gary Alan Rozak

Mark E Gaydos

Maria Bozena Winnicka

WenDi Liu

Michael Thomas Stawovy

Stefan Zimmermann

Scott Jeffrey Volchko

William Loewenthal

In various embodiments, refractory-metal glass melt electrodes are single-crystalline, at least within an outer layer thereof.

Corrosion-resistant glass melt electrodes and methods of using them

In various embodiments, electronic devices such as touch-panel displays incorporate interconnects featuring a conductor layer and, disposed above the conductor layer, a capping layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.

Copper-alloy capping layers for metallization in touch-panel displays

In various embodiments, superconducting wires feature assemblies of clad composite filaments and/or stabilized composite filaments embedded within a wire matrix. The wires may include one or more stabilizing elements for improved mechanical properties.

Fabrication of reinforced superconducting wires

Thin-film transistor and method of forming an electrode of a thin-film transistor

In various embodiments, joined sputtering targets are formed at least in part by spray deposition of the sputtering material and/or welding.

Large-area sputtering targets

In various embodiments, electronic devices such as thin-film transistors incorporate electrodes featuring a conductor layer and, disposed below the conductor layer, a barrier layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.

Copper-alloy barrier layers for metallization in thin-film transistors and flat panel displays

In various embodiments, a joined sputtering target is formed by filling at least a portion of a gap between two discrete sputtering-target tiles with a gap-fill material, spray-depositing a spray material to form a partial joint, removing at least a portion of the gap-fill material, and, thereafter, spray-depositing the spray material to join the tiles.

Methods of manufacturing large-area sputtering targets by cold spray

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Boston, MA, United States of America

Francois-Charles Dary