Commissariat a L'energie Atomique

Francois Buiguez

Louis Giral

Charles Rosilio

Francois Schue

Joel Hartmann

Louise Peccoud

Guillermo Bomchil

Alain Monfret

Sylvie Galzin

Photosensitive film which is photosensitive in a given wavelength range comprises at least one silicon-containing polymer, at least one salt which can be converted into a Brunsted acid by irradiation and optionally at least one photosensitizer. The silicon-containing polymer-based photosensitive film can be used as a masking resin in a lithography process for producing electronic components.

Silicon-containing polymer and its use as a masking resin in a

Photosensitive film based on silicon-containing polymer and its use as a

Process for the autopositioning of a local field oxide relative to an insulating trench. This process consists of forming at least one first insulating coating on a silicon substrate, producing a second insulating coating on the first coating, anisotropically etching the first and second coating until the region of the substrate in which the trench is to be formed is exposed, forming insulating spacers on the etched flanks of the first and second coatings, anisotropically etching the substrate region in order to form the trench, the second etched coating and the spacers used as a mask for said etching, eliminating the mask, forming the insulating edges in the trench, filling said trench with a material and forming the field oxide.

Process for the autopositioning of a local field oxide with respect to

The method consists in establishing the ion bombardment parameters, in varying a regulation parameter in order to initiate deposition, in measuring at each instant the total pressure drop within the vacuum chamber with respect to the initial pressure and in controlling the total pressure drop by controllably varying the regulation parameter.

Method and apparatus for controlling the deposition of films by reactive

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S'Egreve, France

Francois Buiguez