Alcatel

Alcatel Lucent

Alcatel N.v.

Alcatel Cit

Francois Brillouet

Leon Goldstein

Patrick Garabedian

Guang-Hua Duan

Joel Jacquet

Francis Poingt

Paul Salet

Pierre Doussiere

Christophe Starck

Jean-Louis Gentner

Jean-Louis Lievin

Philippe Pagnod-Rossiaux

Dominique Bonnevie

Helene Sillard

Julien Boucart

An integrated optical structure includes at least one optical isolator, having a magneto-optical layer, associated with at least one SOA optical amplifier having a waveguide having an n-doped semiconductor layer, a p-doped semiconductor layer, and an active area disposed between the n-doped semiconductor layer and the p-doped semiconductor layer. The optical isolator is disposed between an SOI base and the SOA optical amplifier's waveguide. The optical isolator's magneto-optical layer is disposed between a lower insulating layer and an upper insulating layer. The optical isolator's magneto-optical layer may be a layer of ferromagnetic metallic material, such as a Fe&#x2014;Co metallic alloy, or a magnetic oxide layer. An optical device includes at least one integrated optical structure.

Integrated optical structure comprising an optical isolator

An integrated optical component having a first section (S ) including a wave guide ( ) perpendicular to an output facet (P) of the component, a termination (T) of the wave guide being coupled to this facet, and including a second section (S ) upstream from the first section and capable of being interfered with by the signal reflected by the said facet and guided by the wave guide. The guide termination (T) includes an inclined guiding section ( ) and a laterally non-guiding section ( ) leading to this facet (P).

Integrated optical component

Two semiconductor layers of the laser form a tunnel junction enabling an electrical current for pumping the laser to pass from an N doped semiconductor Bragg mirror to a P doped injection layer belonging to the light-amplifying structure. The Bragg mirror co-operates with another mirror of the same type having the same doping to include said structure in an optical cavity of the laser. In a variant, the tunnel junction may be buried and located so as to constitute confinement means for said pumping current. The laser can be used in an optical fiber communications network.

Surface emitting semiconductor laser

The energization current of an indium phosphide or gallium arsenide double channel semiconductor laser is confined within a laser stripe by near and far current blocking arrangements. The near current blocking arrangements are formed by a blocking junction formed in two lateral channels delimiting the stripe. The far current blocking arrangements are formed by an iron-doped semi-insulative layer grown epitaxially before the lateral channels are etched. A particular application is to the fabrication of pump lasers used in optical amplifiers of optical fiber links.

Double channel semiconductor laser and method of fabricating it

In a method of manufacturing a planar buried heterojunction laser, after etching to delimit a laser stripe in relief on a substrate, lateral layers to surround the stripe are formed by a non-selective growth method not only at the sides of the stripe but also above it to create a parasitic projection. This projection is then removed after separation from the substrate by selective attack of a lift-off stripe which was deposited for this purpose above the stripe prior to this etching. Passages are formed for the attack medium used for this purpose. The invention can be applied in particular to the manufacture of fiber optic transmission systems.

Method of manufacturing a planar buried heterojunction laser

Growing community of inventors

Clamart, France

Francois Brillouet