Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Francois Boulard

Olivier Gravrand

Johan Rothman

Laurent Mollard

Roch Espiau De Lamaestre

Giacomo Badano

Guillaume Bourgeois

Alexandre Ferron

David Fowler

Cyril Cervera

Christophe Grangier

A photodetection device includes a pixel matrix in which each pixel includes a barrier photodetector. The pixel matrix includes an absorption layer, a barrier layer, a contact layer, and at least one separation element to delimit the pixels. At least one separation element extends above the contact layer, and forms at least one depletion zone that extends locally in the contact layer, to block the lateral circulation of charge carriers.

Barrier photodetectors matrix with pixellation by local depletions

The invention relates to a method for manufacturing a first support () for forming, in particular with a functionalised second support (), an optoelectronic component (), the first support () comprising a semiconductor layer () and an alignment mark () provided on said semiconductor layer (). The manufacturing method includes in particular a step of forming an aperture () in a semiconductor layer () comprising cadmium, a step of diffusing cadmium in a second location () of the aperture () and a cadmium sensitive etching step for promoting etching of one from the second location () which is rich in cadmium and the rest of a surface (B) of the semiconductor layer (). The invention also relates to a first support ().

Support for forming an optoelectronic component, optoelectronic component and method for manufacturing such a support and such a component

The invention relates to a photodiode type structure (comprising: a support () including at least one semiconductor layer, the semiconductor layer () including of a first semiconductor zone () of a first type of conductivity and a mesa () in contact with the semiconductor layer (). The mesa () includes of a second semiconductor zone (), known as absorption zone, said second semiconductor zone () being of a second type of conductivity. The second semiconductor zone has a concentration of majority carriers such that the second semiconductor zone () is depleted in the absence of polarization of the structure (). The structure () further comprises a third semiconductor zone () of the second type of conductivity made of a third material transparent in the absorbed wavelength range. The third semiconductor zone () is interposed between the first and the second semiconductor zones () while being at least partially arranged in the semiconductor layer (). The invention also relates to a component and a method for manufacturing such a structure ().

Photodiode type structure, component and method for manufacturing such a structure

A semiconducting structure configured to receive electromagnetic radiation, a method for manufacturing such a structure, and a semiconductor component, the semiconductor structure including: a first semiconducting area of a first type of conductivity, a second semiconducting area of a second type of conductivity opposite to the first type of conductivity, the second area being in contact with the first area to form a semiconducting junction. The second area includes a portion for which a concentration of majority carriers is at least ten times less than a concentration of majority carriers of the first area. The second area and its portion are essentially made in a first cavity configured to focus in the first cavity at least one portion of the electromagnetic radiation.

Semiconductor structure comprising an absorbing area placed in a focusing cavity

A semi-conducting component including a semi-conducting layer of a first conductivity type including a plurality of semi-conducting zones of a second conductivity type opposite that of the semi-conducting layer, and an insulating layer. The component further includes a first bias mechanism configured to bias the semi-conducting layer and a second bias mechanism configured to bias a semi-conducting zone. The first bias mechanism includes a conducting layer in contact with the insulating layer and which includes passageways for each second bias mechanism with the spacing between the conducting layer and the second bias mechanism which is located facing the corresponding semi-conducting zone.

Semiconductor component and process for fabricating a semiconductor component

A planar photodiode array including a useful layer made of CdHgTe. The useful layer includes at least two superimposed doped layers, each interface between two doped layers forming a single PN junction; the useful layer has at least one separation region, extending from the upper face of the useful layer, and separating at least two useful volumes while going through the PN junction; and beyond a predetermined depth in the useful layer, the average cadmium concentration in the useful volumes is less than the average cadmium concentration in the separation region.

Growing community of inventors

Grenoble, France

Francois Boulard