Infineon Technologies Ag

Franco Mariani

Adolf Koller

Werner Kroeninger

Markus Brunnbauer

Korbinian Kaspar

Andreas Bauer

Horst Theuss

Alexander Heinrich

Manfred Schneegans

Thomas Fischer

Bernhard Weidgans

Katharina Umminger

Gerhard Leschik

Reinhard Hess

Christoph Ahamer

Jens Arkenau

Christoph Kamseder

Corneleus Esguerra Caunan

A method for forming a semiconductor device includes forming a laser marking buried within a semiconductor substrate and thinning the semiconductor substrate from a backside of the semiconductor substrate. For example, a semiconductor device includes a semiconductor substrate located in a semiconductor package. A laser marking is buried within the semiconductor substrate. For example, another semiconductor device includes a semiconductor substrate. A laser marking is located at a backside surface of the semiconductor substrate. Further, a portion of the backside surface located adjacent to the laser marking is free of recast material.

Methods for forming a semiconductor device and semiconductor devices

A circumferential embedded structure is formed by laser irradiation in a semiconductor substrate, which is of a semiconductor material. The embedded structure includes a polycrystalline structure of the semiconductor material, and surrounds a central portion of a semiconductor die. The semiconductor die including the embedded structure is separated from the semiconductor substrate.

Semiconductor device with circumferential structure and method of manufacturing

A method of manufacturing electronic dies by separating a wafer into electronic dies, wherein the method comprises forming a groove in the wafer with a first material removal tool having a first thickness, enlarging the groove by a second material removal tool having a second thickness larger than the first thickness, and subsequently increasing a depth of the groove by a third material removal tool having a third thickness smaller than the second thickness until the wafer is separated.

Separation of workpiece with three material removal stages

Separation grooves are etched from a main surface into a semiconductor substrate. The separation grooves separate chip regions in horizontal directions parallel to the main surface. At least some of the separation grooves are spaced from a lateral outer surface of the semiconductor substrate by at most a first distance. An indentation is formed along a lateral surface. The indentation extends from the main surface into the semiconductor substrate. A minimum horizontal indentation width of the indentation is equal to or greater than the first distance. A with respect to the main surface vertical extension of the indentation is equal to or greater than a vertical extension of the separation grooves.

Method of separating semiconductor dies from a semiconductor substrate, semiconductor substrate assembly and semiconductor die assembly

Methods and apparatuses are provided where a parting agent is applied to at least one portion of a substrate. The at least one portion of the substrate is removed from a carrier.

Substrate removal from a carrier

A carrier tape comprises a flexible body portion having a top surface. The flexible body portion comprises a plurality of pockets. Each of the plurality of pockets comprises pocket side walls, a base bottom portion fully circulating a raised bottom portion of a pedestal. The pedestal is made up of the raised bottom portion and pedestal side walls. The pedestal sidewalls, the base bottom portion and a lower part of the pocket side walls constitute a trench fully circulating the pedestal.

Carrier tape comprising pockets including a base bottom portion and a raised bottom portion

A method of processing a semiconductor substrate is provided. The method may include forming a film over a first side of a semiconductor substrate, forming at least one separation region in the semiconductor substrate between a first region and a second region of the semiconductor substrate, arranging the semiconductor substrate on a breaking device, wherein the breaking device comprises a breaking edge, and wherein the semiconductor substrate is arranged with the film facing the breaking device and in at least one alignment position with the at least one separation region aligned with the breaking edge, and forcing the semiconductor substrate to bend the first region with respect to the second region over the breaking edge until the film separates between the breaking edge and the at least one separation region.

Method of processing a semiconductor substrate and semiconductor chip

A method includes providing a semiconductor wafer including multiple semiconductor chips, forming a first scribe line on a frontside of the semiconductor wafer, wherein the first scribe line has a first width and separates semiconductor chips of the semiconductor wafer, forming a second scribe line on the frontside of the semiconductor wafer, wherein the second scribe line has a second width and separates semiconductor chips of the semiconductor wafer, wherein the first scribe line and the second scribe line intersect in a crossing area which is greater than a product of the first width and the second width, and plasma etching the semiconductor wafer in the crossing area.

Semiconductor device and method for manufacturing a semiconductor device

A semiconductor device includes a semiconductor chip including a first main face and a second main face. The second main face is the backside of the semiconductor chip. The second main face includes a first region and a second region. The second region is a peripheral region of the second main face and the level of the first region and the level of the second region are different. The first region may be filled with metal and may be planarized to the same level as the second region.

Semiconductor device comprising a protective structure on a chip backside and method of producing the same

A semiconductor device and method. One embodiment provides a semiconductor substrate having a plurality of cut regions. A metal layer is located within a cut region. The metal layer includes a recess, the recess having a slit-like shape.

Semiconductor device and method

A method for fabricating an integrated circuit including forming a first trench in a rear side of a semiconductor wafer, wherein the first trench has a depth extending partially through a thickness of the semiconductor wafer, coating the rear side with a layer of coating material, including filling the first trench with the coating material, and forming a second trench in a front side of the semiconductor wafer, wherein the second trench is aligned with and has a width less than a width of the first trench, and wherein the second trench has a depth extending at least through a remaining portion of the semiconductor wafer so as to be in communication with the coating material filling the first trench.

Method of integrated circuit fabrication

One aspect includes an electronic device including an integrated component with a substrate. An electrically conductive first layer region is arranged at the substrate, wherein the layer thickness of the first layer region is greater than 10 micrometers or greater than 50 micrometers.

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Pentling-Neudorf, Germany

Franco Mariani