Other

Victoria Link Limited

Ecole Polytechnique Federale De Lausanne

Granville, Simon Edward

Mcnulty, James Francis

Anton, Eva-maria Johanna

Trodahl, Harry Joseph

Natali, Franck

Ruck, Benjamin John

Franck Natali

Harry Joseph Trodahl

Benjamin John Ruck

Stéphane Ange Vézian

Jay Ross Peng Cheong Chan

Stephane Ange Vezian

Eva-maria Johanna Anton

James Francis McNulty

Simon Edward Granville

The present invention concerns an ammonia production method comprising the steps of: providing at least one rare earth nitride material or layer in a chamber; creating a vacuum or an inert atmosphere in the chamber; and providing hydrogen Hto react with nitrogen N released at an external surface of the at least one rare earth nitride material or layer to produce ammonia.

Ammonia production method and apparatus for ammonia production

The present invention concerns a structure or device comprising a rare earth nitride material, and a removable capping for passivating the rare earth nitride material.

Rare earth nitride structures and devices and method for removing a passivating capping

Disclosed herein are magnesium-doped rare earth nitride materials, some of which are semi-insulating or insulating. Also disclosed are methods for preparing the materials. The magnesium-doped rare earth nitride materials may be useful in the fabrication of, for example, spintronics, electronic and optoelectronic devices.

Doped rare earth nitride materials and devices comprising same

Disclosed herein are magnetic materials comprising rare earth nitrides and, more particularly, magnetic materials comprising multilayer-structured materials comprising one relatively soft and one relatively hard magnetic layer. The magnetic materials comprise a first ferromagnetic layer, a second ferromagnetic layer, and a blocking layer between and in contact with each of the first 5 and second ferromagnetic layers. The first and second ferromagnetic layers have different coercive fields. The first ferromagnetic layer comprises a first rare earth nitride material and the second ferromagnetic layer comprises a second rare earth nitride material. Also disclosed are methods for preparing the materials. The materials are useful in the fabrication of devices, such as GMR magnetic field sensors, MRAM devices, TMR magnetic field sensors, and magnetic 10 tunnel junctions.

Magnetic materials and devices comprising rare earth nitrides

Structure or device comprising a hexagonal crystal layer or hexagonal crystal substrate, and a (001)-oriented rare earth nitride epitaxial layer on the hexagonal crystal layer or hexagonal crystal substrate.

Rare earth nitride structure or device and fabrication method

Structure or device comprises a AlGaN or InGaN layer or substrate, a rare earth nitride epitaxial layer, and an AlGaN epitaxial interlayer between the rare earth nitride epitaxial layer and the AlGaN or InGaN layer or substrate. The interlayer is in direct contact with the rare earth nitride epitaxial layer and the AlGaN or InGaN layer or substrate.

Rare earth nitride and group III-nitride structure or device

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Porirua, New Zealand

Franck Natali