Alcatel

Alcatel N.v.

Avanex Corporation

Nokia Solutions and Networks Oy

Franck Mallecot

Claude Artigue

Antonina Plais

Christine Chaumont

Arnaud Leroy

Denis Tregoat

Francis Poingt

Denis Leclerc

Hisao Nakajima

Emmanuel Grard

Christian Brot

Joël Jacquet

Didier Decoster

Fr Ed Pommereau

Anton Ambrosy

Joe Harari

Lionel Legouezigou

Philippe Charbonnier

A semiconductor electrooptic monolithic component comprising successively a first section capable of emitting light at a first wavelength and including a first active layer, a second section capable of absorbing light at the said first wavelength and including a second active layer, and a third section capable of detecting light at a second wavelength and including a third active layer. The component is characterized in that the second active layer is designed to ensure in the said second section an absorption higher than that which would be allowed by an active layer identical to the said first layer.

Multi section electrooptic monolithic component

A method of fabricating a component having a crystalline silicon substrate includes the steps of depositing a layer of silica onto a crystalline silicon substrate, this silica layer being doped with dopants, and then treating the substrate. Before the doped silica layer is deposited, a barrier layer is formed on the substrate, consisting of a barrier material opposing diffusion of the dopants. The doped silica layer is deposited onto this barrier layer. The invention finds one particular application in connecting flat bundles of fibers in communication networks.

Method of fabricating a component with crystalline silicon substrate

The invention concerns a semiconductor opto-electronic component comprising at least two optically active structures ( ), at least one of which consists of a detector ( ), characterized in that the detector or detectors ( ) comprise a first active portion ( ) able to detect a signal at a given wavelength and a second inactive portion ( ) only slightly sensitive to the signal to be detected and exposed to the non-guided stray light conveyed in the component.

Multi-section opto-electronic component

The invention relates to a semiconductor electro-optical monolithic component. The component is made up of at least two sections, each of which has a respective waveguide, the waveguides being etched in the form of ridges, disposed in line, and buried in a cladding layer. The sections are electrically isolated from one other by a resistive zone. At the interface between two sections, the waveguides are locally of an extended width not less than the width of the resistive zone.

Multi-section electro-optical monolithic component

A method is disclosed of assembling an optical module comprising at least two optical components whose waveguides are optically coupled to each other. Positioning one waveguide relative to the other one relies on two contact surfaces on the respective optical components cooperating with each other. A first contact surface includes a vertical bearing plane in the same horizontal plane as the optical axis of the waveguide of one of the optical components. A second contact surface includes a vertical bearing plane in the same horizontal plane as the optical axis of the waveguide of the other optical component.

Method of assembling an optical module

A semiconductor electro-optical monolithic component includes at least first and second sections (,) each having respectively a first wave guide (,) and a second wave guide (,) transmitting light, the wave guides being etched in the form of strips and confined between an upper cladding layer (,) doped with carriers of a first type and a lower layer (,A,,B) doped with carriers of a second type, a third section (,) being disposed between the first and second sections (,) and having a third guide not transmitting light, the third guide being disposed so as to couple the first guide (,) to the said second guide (,). An absorbent layer (,), having a photoluminescence wavelength at least equal to the smallest wavelength of the waves propagating in the first and second wave guides (,), is placed in the said lower layer (,A,,B) doped with carriers of the second type; the said lower layer (,A,,B) having an index lower than that of the absorbent layer (,) and that of the said second and third guides (,).

A hybrid optical device includes a passive component coupled optically to an active component, the passive component being formed in layers of silica on a substrate made of silica, the layers and the substrate thus forming a silica-on-silica structure. The hybrid optical device includes an intermediate element having good thermal conductivity and a coefficient of thermal expansion similar to that of the active component, wherein the active component is fixed to the intermediate element prior to insertion into the cavity, and the intermediate element is fixed to the structure so that the active component is located inside the cavity and is coupled optically to the passive component.

Hybrid optical module including an intermediate element

For end-to-end alignment of two optical waveguides one of which is in the form of a strip buried in a semiconductor wafer, a longitudinal lateral mark is used constituted by the flank of a valley etched in the wafer and self-aligned to the strip formed beforehand. To achieve this self-alignment a protection layer is deposited in the area in which the mark is to be formed, a register layer is deposited on top of the protection layer and a photosensitive resin is deposited on top of these layers and the substrate. First selective etching eliminates the register layer at the location of the valley of the mark. Second and third selective etching respectively etch the lateral channels of the strip and then the valley of the mark.

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Montrouge, France

Franck Mallecot