Commissariat a L'energie Atomique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

S.o.i.tec Silicon on Insulator Technologies

S.o.i. Tec Silicon on Insulator Technologies, S.a.

Other

Soitec

Commissariat À L'energie Atomique (cea)

Centre National De La Recherche Scientifique

Franck Fournel

Hubert Moriceau

Chrystel Deguet

Thomas Signamarcheix

Christophe Morales

Marc Zussy

Pierre Montmeat

Bernard Aspar

Ian Cayrefourcq

Didier Landru

Olivier Rayssac

Ionut Radu

Laurent Clavelier

Konstantin Bourdelle

Gweltaz Gaudin

Noël Magnea

Thierry Baron

Aurélie Tauzin

Julie Widiez

Christelle Lagahe-Blanchard

Joël Eymery

Jean-Sebastien Moulet

Pierre Mur

Nguyet-Phuong Nguyen

Thibaut Maurice

Fran&ccedil;ois Martin

Yves Samson

Marie-No&euml;lle Semeria

Jean-Sébastien Moulet

Elodie Beche

François Martin

Christelle Lagahe

Marie-Noëlle Semeria

Michel Pellat

Capucine Delage

Beryl Blondeau

Caroline Rauer

Hubert Eymery

No&euml;l Magnea

Phillippe Montmayeul

Nol Magnea

A method comprising the following steps: a) bonding a handle substrate including a base and raised elements to a substrate of interest including a support substrate covered with a thin film, the thin film including a material sensitive to an etchant, whereby the thin film includes first areas not covered with the raised elements and second areas covered with the raised elements, b) performing an etching with the etchant to remove the material sensitive to the etchant present in the first areas, the second areas being protected during the etching, whereby the thin film is structured in the form of raised patterns, c) separating the handle substrate from the substrate of interest.

Method for forming patterns on a substrate

A method comprising the following steps: a) Bonding a handle substrate including raised elements to a substrate of interest including a support substrate covered with a thin film including a material sensitive to an etchant, whereby the thin film includes first areas not covered with the raised elements and second areas covered with said elements, b) Placing into contact the obtained assembly with a solution including a hydrophobic agent, to cover the first areas with a hydrophobic film, c) Separating the two substrates, d) Placing into contact the substrate of interest with a solution containing the etchant, whereby the material sensitive to the etchant present in the second areas is etched and raised patterns are formed.

Substrate structuring method

The invention aims for a wafer edge trimming methodadhered on a support waferby way of an interface layer. A zone at the perimeterof the waferis trimmed by grinding. The stopping of the grinding is advantageously done at the level of the interface layer. To do this, an interface layercomprising a transition layerhaving a resistance to grinding greater than that of the waferis used. According to a possibility, detecting an increase of the resistance to grinding during the grinding is done, so as to stop the grinding.

Method for wafer trimming

There is provided a method for transforming an electronic device from an initial state, wherein the device includes a first substrate and a second substrate, the first and second substrates being joined by means of a bonding interfaced using their respective first faces, wherein the first substrate includes at least one cavity, produced using the first face of the first substrate, the cavity including a bottom bordered by at least one peripheral region and being at least partially filled with a buffer layer, in the bottom of the cavity, and wherein the first face of the second substrate is at least partly opposite the cavity of the first substrate. The method also includes a step of removing the bottom of the cavity of the first substrate from a first face, opposite to the first face of the first substrate.

Method of transforming an electronic device

A method for producing an electronic device including in a stack at least a first structure and a second structure, the structures being obtained from a first substrate and a second substrate. Marks are obtained from a pattern made on one of the substrates. Furthermore, the same supporting members are used during the bonding phase for the preparation of the marks and for the bonding phase for the assembly of the structures.

Method for producing an electronic device

A method for assembling two substrates by molecular adhesion comprises: a first step (a) of putting first and second substrates in close contact in order to form an assembly having an assembly interface; a second step (b) of reinforcing the degree of adhesion of the assembly beyond a threshold adhesion value at which water is no longer able to diffuse along the assembly interface. The method also comprises a step (c) of anhydrous treatment of the first and second substrates in a treatment atmosphere having a dew point below &#x2212;10&#xb0; C., and control of the dew point of a working atmosphere to which the first and second substrates are exposed from the anhydrous treatment step (c) until the end of the second step (b) so as to limit or prevent the appearance of bonding defects at the assembly interface.

Assembly process of two substrates

A method for treating at least one first material layer including siloxane bonds, wherein at least one surface can be interlocked with a surface of a second material layer by direct bonding, the method including: at least one forced diffusion at a temperature greater than or equal to 30&#xb0; C., at least in the first material layer, of chemical species including at least one pair of free electrons and at least one labile proton; and converting at least one portion of the siloxane bonds into silanol bonds in at least one portion of the first material layer extending from the surface to a depth greater than or equal to approximately 10 nm.

Method for the treatment and direct bonding of a material layer

A method for producing a hybrid substrate, including a support substrate, a continuous buried insulator layer and, on this continuous layer, a hybrid layer including alternating zones of a first material and at least one second material, wherein these two materials are different by their nature and/or their crystallographic characteristics. The method forms a hybrid layer, including alternating zones of first and second materials, on a homogeneous substrate, assembles this hybrid layer, the continuous insulator layer and the support substrate, and eliminates a part at least of the homogeneous substrate, before or after the assembling.

Method for producing hybrid components

A method of producing a hybrid substrate includes preparing a monocrystalline first substrate to obtain two surface portions. A temporary substrate is prepared including a mixed layer along which extends one surface portion and is formed of first areas and adjacent different second areas of amorphous material, the second areas forming at least part of the free surface of the first substrate. The first substrate is bonded to the other surface portion with the same crystal orientation as the first surface portion, by molecular bonding over at least the amorphous areas. A solid phase recrystallization of at least part of the amorphous areas according to the crystal orientation of the first substrate is selectively carried and the two surface portions are separated.

Method of producing a hybrid substrate by partial recrystallization of a mixed layer

A process for forming a thin film of a given material includes providing a first substrate having, on the surface, an amorphous and/or polycrystalline film of the given material and a second substrate is bonded to the first substrate by hydrophobic direct bonding (molecular adhesion), the second substrate having a single-crystal reference film of a given crystallographic orientation on the surface thereof. A heat treatment is applied at least to the amorphous and/or polycrystalline film, where the heat treatment causes at least a portion of the amorphous and/or polycrystalline film to undergo solid-phase recrystallization along the crystallographic orientation of the reference film, where the reference film acts as a recrystallization seed. The at least partly recrystallized film is then separated from at least a portion of the reference film.

Method in the microelectronics fields of forming a monocrystalline layer

A data storage medium includes a carrier substrate having an electrode layer on the surface thereof and a sensitive material layer extending along the electrode layeradapted to be locally modified between two electrical states by the action of a localized electric field. A reference plane extends globally parallel to the sensitive material layer and is configured to accommodate at least one element for application of an electrostatic field in combination with the electrode layer the electrode layer including a plurality of conductive portions having a dimension at most equal to 100 nm in at least one direction parallel to the reference plane and separated by at least one electrically insulative zone, where at least some of the conductive portions are electrically interconnected, the conductive portions defining data write/read locations within the sensitive material layer.

Data storage medium and associated method

A method of making a complex microelectronic structure by assembling two substrates through two respective linking surfaces, the structure being designed to be dissociated at a separation zone. Prior to assembly, in producing a state difference in the tangential stresses between the two surfaces to be assembled, the state difference is selected so as to produce in the assembled structure a predetermined stress state at the time of dissociation.

Method for making a stressed structure designed to be dissociated

A method for producing a hybrid substrate includes preparing a first substrate including a mixed layer and an underlying electrically insulating continuous layer, the mixed layer made up of first single-crystal areas and second adjacent amorphous areas, the second areas making up at least part of the free surface of the first substrate. A second substrate is bonded to the first substrate, the second substrate including on the surface thereof, a reference layer with a predetermined crystallographic orientation. The first substrate is bonded to the second substrate by hydrophobic molecular bonding of at least the amorphous areas. A recrystallization of at least part of the amorphous areas to solid phase is carried out according to the crystallographic orientation of the reference layer, and the two substrates are separated at the bonding interface.

Method of producing a hybrid substrate having a continuous buried electrically insulating layer

A method for self-supported transfer of a fine layer, in which at least one species of ions is implanted in a source-substrate at a specified depth in relation to the surface of the source-substrate. A stiffener is applied in intimate contact with the source-substrate and the source-substrate undergoes a heat treatment at a specified temperature during a specified period of time in order to create an embrittled buried area substantially at the specified depth without causing a thin layer, defined between the surface and the embrittled buried layer in relation to the remainder of the source-substrate, to become thermally detached. A controlled localized energy pulse is applied to the source-substrate in order to cause the self-supported detachment of the thin layer.

Method for self-supported transfer of a fine layer by pulsation after implantation or co-implantation

A method of transferring a thin layer from a source substrate having a surface layer of a first material along a free surface thereof to a target substrate having at least one surface layer of a second material along a free surface thereof, where the first material differs from the second material, includes forming within the surface layer of the source substrate a weakened zone delimiting a thin layer with respect to the free surface, and assembling the free surface of the source substrate to the free surface of the target substrate in a stack of alternating layers comprising the first and second materials, so that there are, on either side of an interface formed by bringing the free surfaces into intimate contact. The cumulative thicknesses of the layers of the first material are substantially equal to the cumulative thickness of the layers of the second material, the layers having thicknesses at least equal to 50 microns and at least 1000 times the depth at which the weakened zone is formed. The thin layer is detached by applying at least partially thermal energy to fracture the weakened zone.

Method of transferring a thin layer onto a target substrate having a coefficient of thermal expansion different from that of the thin layer

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Villard-Bonnot, France

Franck Fournel