Stmicroelectronics S.a.

Sgs-thomson Microelectronics S.a.

Franck Duclos

Olivier Ladiray

Jean-Michel Simonnet

Jérôme Heurtier

Sophie Gimonet

Fabien Rami

The invention concerns a pulsed bistable bidirectional electronic switch comprising a monolithic semiconductor circuit formed from a substrate () whereof the rear surface (A) is coated with a metallization connected to earth. Said circuit comprises a vertical bidirectional switch (T, T) provided with a first gate terminal (M), whereof the main electrode (A) on the side of the front surface is connected to a load and an alternating current supply; a horizontal thyristor (T) comprising an upper layer () of the vertical bidirectional switch, a first P-type region (), and a second N-type region () formed in the first region; a second gate terminal (G) connected to one of the first and second regions, the other being connected to earth. A capacitor (C) is connected to the first gate terminal (G) and to the alternating current supply (VAC).

Pulsed bistable bidirectional electronic switch

The invention concerns a switching circuit () adapted to generate a pulse when there occurs a rising edge of a signal applied on an input terminal (CTRL), comprising: a first NPN type bipolar transistor (TN) whereof the transmitter is connected to the input terminal; a second transistor (TP) whereof a control electrode is connected, through a first resistor (Re), to the input terminal, the base of the first transistor being connected to a supply potential (VDD) by the second transistor in series with a second resistor (Rp); and a third transistor (TN) connecting an output terminal () of the switching circuit to a reference potential (GND) and whereof a control electrode is connected to the collector of the first transistor (TN).

Switching aid circuit for a logic circuit

A monolithic bidirectional switch formed in a semiconductor substrate of type N, including a first main vertical thyristor, the rear surface layer of which is of type P, a second main vertical thyristor, the rear surface layer of which is of type N, an auxiliary vertical thyristor, the rear surface layer of which is of type P and is common with that of the first main thyristor, a peripheral region of type P especially connecting the rear surface layer of the auxiliary thyristor to the layer of this thyristor located on the other side of the substrate, a first metallization on the rear surface side, a second metallization on the front surface side connecting the front surface layers of the first and second thyristors. An additional region has a function of isolating the rear surface of the auxiliary thyristor and the first metallization.

Responsive bidirectional static switch

An insulating wall of a second conductivity type intended for separating elementary components formed in different wells of a semiconductive layer of a first conductivity type, a component located in one at least one of the wells being capable of operating with a high current density. The insulating wall includes at least two elementary insulating walls separated by a portion of the wafer material and, in operation, this portion is connected to a reference potential.

Insulating wall between power components

A monolithic bidirectional switch formed in a semiconductor substrate of a first conductivity type having a front surface and a rear surface, including a first main vertical thyristor, the rear surface layer of which is of the second conductivity type, a second main vertical thyristor, the rear surface layer of which is of the first conductivity type. A structure for triggering each of the first and second main thyristors is arranged to face regions mutually distant from the two main thyristors, the neighboring portions of which correspond to a region for which, for the first main thyristor, a short-circuit area between cathode and cathode gate is formed.

Bidirectional switch with increased switching breakdown voltage

A zero crossing control circuit of a bidirectional switch including two transistors of complementary types connected in parallel between the gate of the bidirectional switch and the main reference terminal of the bidirectional switch, the gate of the bidirectional switch being connected to a control source via a first resistor, and each of the control terminals of the transistors being connected to the second main terminal of the bidirectional switch via a second resistor of high value, a zener diode being interposed between the second resistor and each of the control terminals according to a biasing adapted to turning on each of the transistors when the zener threshold is exceeded.

Zero crossing control structure for a bidirectional switch with a stable threshold

The present invention relates to an isolating wall for separating elementary components formed in different wells, a component located in at least one of the wells being capable of operating with a high current density. The isolating wall exhibits in its median portion a concentration of carriers higher than 10,atoms/cm,. Preferably, the width of the openings from which the dopant diffusions are formed in the upper and lower surfaces of the substrate is higher than 1.3 times the half-thickness of the substrate.

Isolating wall between power components

The present invention relates to an assembly of two pairs of diodes in a single semiconductor substrate of a first type of conductivity, the first pair including a first diode in series with a second diode, the second pair including a third diode in series with a fourth diode, the two pairs of diodes being arranged in parallel. Each of the first and third diodes includes neighboring regions of distinct types of conductivity formed in a lightly-doped well of the second type of conductivity, these wells being separated; each of the second and fourth diodes includes separated regions of distinct types of conductivity; and metallizations connect the electrodes of the diodes to form the desired series-to-parallel assembly.

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Tours, France

Franck Duclos