International Business Machines Corporation

Freescale Semiconductor,inc.

Chartered Semiconductor Manufacturing Ltd (corporation)

Infineon Technologies North America Corp.

Franck Arnaud

Haizhou Yin

Xiangdong Chen

Dae-Gyu Park

Voon-Yew Thean

Kenneth Jay Stein

Jin-Ping Han

Yong Meng Lee

Da Zhang

Anda C Mocuta

Young Way Teh

Laegu Kang

Melanie J Sherony

Weipeng Li

An integrated circuit structure includes a substrate and at least one pair of complementary transistors on or in the substrate. The pair of complementary transistors comprises a first transistor and a second transistor. The structure also includes a first stress-producing layer on the first transistor and the second transistor, and a second stress-producing layer on the first stress-producing layer over the first transistor and the second transistor. The first stress-producing layer applies tensile strain force on the first transistor and the second transistor. The second stress-producing layer applies compressive strain force on the first stress-producing layer, the first transistor, and the second transistor.

Balancing NFET and PFET performance using straining layers

Growing community of inventors

Hopewell Junction, NY, United States of America

Franck Arnaud