U.S. Philips Corporation

Franciscus A Vollenbroek

Wilhelmus P Nijssen

Elisabeth J Spiertz

Leendert Vriens

Aart A Van Gorkum

Jan G Dil

Johannes C Rijpers

Albert A Comberg

Johannes H Wilting

Marcellinus J Geomini

Henricus J Kroon

A color cathode ray tube of the shadow mask or beam index type in which the screen structure applied to the faceplate has a plurality of triplets of optical interference filter stripes which are adapted to pass red (R), green (G) and blue (B) light produced by a homogeneous cathodoluminescent screen layer. The usual aluminium layer may be applied to the screen layer. The optical interference filter stripes may have short wave pass filters, band pass filters or a combination of both types. The short wave pass filter stripes may have modified quarter wavelength multilayer dielectric filters and the bandpass filter may have a Fabry-Perot filter.

Color cathode ray tube having interference filter with different pass

A method of manufacturing a semiconductor device, in which a layer of photolacquer (5) containing as a photoactive component a diazo oxide is provided on a semiconductor substrate. Of this layer, parts (9) are irradiated by a first patterned irradiation (7) and these parts are then rendered poorly developable by an intermediate treatment. Subsequently, the lacquer layer (5) is subjected to a second non-patterned irradiation (11) and is then developed. According to the invention, in the parts (9) irradiated by the first irradiation a pigment is formed, which absorbs radiation having a wavelength at which diazo oxide is photosensitive. The second irradiation is carried out with radiation of that wavelength. Thus, lacquer tracks having a rectangular profile can be obtained in a simple manner.

Method of manufacturing a semiconductor device, in which a negative

A method of manufacturing a semiconductor device, in which there is applied to a surface of a semiconductor substrate a base layer of photosensitive lacquer, which is coated with a top layer of photosensitive lacquer. By means of a first patterned irradiation, there is formed in the top layer a mask of which a contact copy is formed in the base layer during a second irradiation. A material which can be discolored is used for the top layer. During the first irradiation, the top layer is locally discolored, whereupon the layer thus discolored is used as a mask during the second irradiation. By the use of the discoloring top layer, additional processing steps, which would ensure from a wet development of the top layer, are avoided.

Method of manufacturing a semiconductor device, in which a photolacquer

A method of manufacturing a semiconductor device in which a photosensitive lacquer layer is developed in a lye solution, and comprises a polymeric material and a sensitizer with a diazo group and a ketone group. This lacquer layer is formed on a substrate surface. After a patterning irradiation, but before development, the lacquer layer is subjected to an intermediate treatment comprising two irradiations. These irradiations result in that differences in solubility in lye are obtained in the direction of thickness in the parts of the lacquer layer which were not exposed during the patterning irradiation. In this manner, it is possible to realize lacquer patterns with different profiles.

Method of manufacturing a semiconductor device

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Eindhoven, Netherlands

Franciscus A Vollenbroek