Entegris, Inc.

Tivra Corporation

Other

Francisco Machuca

Ronald Phillip Chiarello

Indranil De

Kyle William Montgomery

Stuart A Tison

Trevor A Norman

Robert Mamazza

A defect detection and imaging system is presented for performing microscopy and/or spectroscopy on a device under test. The defect detection system comprises a controller for toggling the state of a light source, which may allow for fast simultaneous high-speed inspection and high-resolution review imaging of the device under test by the same system and simultaneously deliver inspection, computer generated reconstructions or tomography, and defect review on sub second time-scales. The defect detection system further comprises a converter for converting X-ray images of the device under test into photoelectron contrast images to achieve nanometer scale measurement resolution in non-destructive and real-time fashion, to complement or replace destructive TEM. These photoelectron contrast images may be received by a detector to output an electronic format map or 3D/4D image that indicates one or more features of the device under test.

Methods and apparatuses for microscopy and spectroscopy in semiconductor systems

Embodiments as disclosed herein may provide a sensor system including a container, such as a bag, having a port assembly integrated therewith. The port assembly includes an optically transparent window and be configured such that a sensor may be mechanically attached to the port assembly to interface with the optical window. The sensor may include an index of refraction (IoR) sensor that measures the chemical concentration of a liquid inside the container based on a refractive index.

Disposable liquid chemical sensor system

Embodiments as disclosed herein may include a sensor including a luminophor exposed to a fluid flow path. The luminophor may emit light in response to illumination by an excitation light source. The magnitude of light emitted by the luminophor in response to illumination may be determined. It can be determined if this magnitude is within a threshold of the baseline magnitude and an alarm state set based on this determination. This alarm state may indicate that the luminophor has reached an end-of-life state or otherwise should be replaced.

System and method for dectection and signaling of component end-of-life in a dissolved oxygen sensor

Embodiments provide mixing methods, systems, apparatuses, devices and assemblies that enable high-accuracy mixing of two or more substances in a manner that controls the concentrations of one or more substances in the resulting mixture. A mixing apparatus () may enable mixing of two or more substances at a mixing zone or conduit (). The mixing apparatus may include one or more sensors () for detecting one or more characteristics of the mixture during the mixing process. The sensors may detect the mixture characteristics continuously, at intervals or as prompted by a user. The mixture characteristics may be used, in the sensors or in control circuitry, to generate an indication of the concentration of a first constituent substance in the mixture. Based on the detected concentration, the mixing apparatus may automatically adjust a supply of the first substance to the mixing zone or conduit ().

Methods, systems, and apparatuses for controlling substance mixing concentration

Embodiments of a dissolved oxygen sensor are disclosed herein. Embodiments as disclosed herein may include a window of optically transparent material disposed in an opening in a fluid flow path, where a luminophor is attached to the side of the window exposed to the fluid in the flow path. An optical probe may be disposed opposite the window from the fluid flow path on an axis at an angle to the window fluid flow path. The optical probe includes an excitation light source for illumination of the luminophor and a reference light source. An optical reception guide is configured to conduct light from the luminophor to a photodiode adjacent to the end of the optical reception guide distal the window when the luminophor is illuminated by the excitation light source. The optical probe is configured to determine a measure of oxygen concentration of the fluid in the flow path. The optical reception guide and photodiode may be aligned on axis, where the axis may be substantially parallel with the axis on which the optical probe is aligned.

Dissolved oxygen sensor

A process for separating a substrate from an epitaxial layer comprises forming a multilayer substrate comprising a substrate, a lattice matching layer and an epitaxial layer. The method further comprises etching the lattice matching layer by one of a liquid or a vapor phase acid. The lattice matching layer is a metal alloy between the substrate and the epitaxial layer and serves as an etching release layer. The substrate can also be separated from an epitaxial layer by laser lift off process. The process comprises forming a multilayer substrate comprising a substrate, a lattice matching layer and an epitaxial layer, directing laser light at the lattice matching layer, maintaining the laser light on the lattice matching layer for a sufficient period of time so that it is absorbed by free electrons in the lattice matching layer to allow decomposition of the lattice matching layer.

Substrate structures and methods

A multilayer substrate structure comprises a substrate, a thermal matching layer formed on the substrate and a lattice matching layer above the thermal matching layer. The thermal matching layer includes at least one of molybdenum, molybdenum-copper, mullite, sapphire, graphite, aluminum-oxynitrides, silicon, silicon carbide, zinc oxides, and rare earth oxides. The lattice matching layer includes a first chemical element and a second chemical element to form an alloy. The first and second chemical element has similar crystal structures and chemical properties. The coefficient of thermal expansion of the thermal matching layer and the lattice parameter of the lattice matching layer are both approximately equal to that of a member of group III-V compound semiconductors. The lattice constant of the lattice matching layer is approximately equal to that of a member of group III-V compound semiconductor.

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Oakland, CA, United States of America

Francisco Machuca