Infineon Technologies Ag

Infineon Technologies Austria Ag

Infineon Technologies Dresden Gmbh

Other

Francisco Javier Santos Rodriguez

Hans-Joachim Schulze

Roland Rupp

Alexander Breymesser

Andre Brockmeier

Carsten Von Koblinski

Bernhard Goller

Antonio Vellei

Anton Mauder

Johannes Georg Laven

Ronny Kern

Daniel Schloegl

Andre Rainer Stegner

Wolfgang Lehnert

Christian Jaeger

Alexander Philippou

Frank Hille

Iris Moder

Andreas Haertl

Michael Knabl

Matteo Dainese

Johannes Baumgartl

Tobias Franz Wolfgang Hoechbauer

Matteo Piccin

Franz Hirler

Carsten Ahrens

Stephan Voss

Friedrich Kroener

Elmar Falck

Helmut Oefner

Manfred Pfaffenlehner

Matthias Kuenle

Gerald Lackner

Markus Beninger-Bina

Joachim Mahler

Frank Dieter Pfirsch

Michael Bauer

Thoralf Kautzsch

Gerhard Schmidt

Jochen Dangelmaier

Ravi Keshav Joshi

Steffen Bieselt

Heinrich Koerner

Carsten Schaeffer

Johann Gatterbauer

Reimund Engl

Alessia Scire

Philip Christoph Brandt

Guenter Denifl

Wolfgang Scholz

Peter Zorn

Karl Mayer

Werner Kanert

Wolfgang Wagner

Michael Huettinger

Brigitte Ruehle

Christian Philipp Sandow

Caspar Leendertz

Christian Beyer

Holger Schulze

Marko Swoboda

Oliver Hellmund

Paul Ganitzer

Stefan Woehlert

Markus Bina

Reinhard Ploss

Kamil Karlovsky

Christoph Weiss

Nico Caspary

Martin Sporn

Christian Maier

Kae-Horng Wang

Ralf Siemieniec

Franz-Josef Niedernostheide

Rainer Leuschner

Manfred Engelhardt

Peter Irsigler

Jens Peter Konrath

Werner Schustereder

Romain Esteve

Hans-Joerg Timme

Ingo Muri

Thomas Aichinger

Erich Griebl

Martin Mischitz

Olaf Storbeck

Thomas Christian Neidhart

Maria Cotorogea

Gerhard Metzger-Brueckl

Holger Huesken

Oliver Humbel

Franz Dielacher

Vijaye Rajaraman

Markus Heinrici

Andreas Moser

Hans Peter Felsl

Frank Umbach

Angelika Koprowski

Sokratis Sgouridis

A semiconductor substrate includes a base portion, an auxiliary layer and a surface layer. The auxiliary layer is formed on the base portion. The surface layer is formed on the auxiliary layer. The surface layer is in contact with a first main surface of the semiconductor substrate. The auxiliary layer has a different electrochemical dissolution efficiency than the base portion and the surface layer. At least a portion of the auxiliary layer and at least a portion of the surface layer are converted into a porous structure. Subsequently, an epitaxial layer is formed on the first main surface.

Semiconductor device with a porous portion, wafer composite and method of manufacturing a semiconductor device

A semiconductor device and a method of forming a semiconductor device are provided. In an embodiment, the semiconductor device comprises a device region, an edge termination region surrounding the device region, a first metal feature in the edge termination region, a first conformal ion diffusion barrier layer over the first metal feature, and a first conformal chemical protection layer over the first conformal ion diffusion barrier layer.

Semiconductor device

A method of splitting off a semiconductor wafer from a semiconductor bottle includes: forming a separation region within the semiconductor boule, the separation region having at least one altered physical property which increases thermo-mechanical stress within the separation region relative to the remainder of the semiconductor boule; and applying an external force to the semiconductor boule such that at least one crack propagates along the separation region and a wafer splits from the semiconductor boule.

Method for splitting semiconductor wafers

A method includes: providing a layer of porous silicon carbide supported by a silicon carbide substrate; providing a layer of epitaxial silicon carbide on the layer of porous silicon carbide; forming semiconductor devices in the layer of epitaxial silicon carbide; and separating the silicon carbide substrate from the layer of epitaxial silicon carbide at the layer of porous silicon carbide. The layer of porous silicon carbide includes dopants defining a resistivity of the layer of porous silicon carbide. The resistivity of the layer of porous silicon carbide is different from a resistivity of the silicon carbide substrate. Additional methods are described.

Methods of forming semiconductor devices in a layer of epitaxial silicon carbide

pa The method of processing a semiconductor wafer includes forming one or more epitaxial layers over its first main surface. It also involves forming one or more porous layers within the semiconductor wafer or within the epitaxial layers. Together, the semiconductor wafer, the epitaxial layer(s), and the porous layer(s) form a substrate. Next, doped regions of a semiconductor device are formed within the epitaxial layer(s). After forming these doped regions, a non-porous part of the semiconductor wafer is separated from the rest of the substrate along the porous layer(s).

Manufacturing and reuse of semiconductor substrates

A method of forming a semiconductor device includes: forming a first semiconductor layer on a semiconductor substrate, the first semiconductor layer being of the same dopant type as the semiconductor substrate, the first semiconductor layer having a higher dopant concentration than the semiconductor substrate; increasing the porosity of the first semiconductor layer; first annealing the first semiconductor layer in an atmosphere including an inert gas; forming a second semiconductor layer on the first semiconductor layer; and separating the second semiconductor layer from the semiconductor substrate by splitting within the first semiconductor layer. Additional methods of forming a semiconductor device are described.

Methods for forming a semiconductor device having a second semiconductor layer on a first semiconductor layer

A method of forming an electrical contact is provided. The method may include depositing, by atomic layer deposition, a passivation layer over at least a region of a metal surface, wherein the passivation layer may include aluminum oxide, and electrically contacting the region of the metal surface with a metal contact structure, wherein the metal contact structure may include copper.

Chip package, method of forming a chip package and method of forming an electrical contact

A power semiconductor device includes: a drift region; a plurality of IGBT cells each having a plurality of trenches extending into the drift region along a vertical direction and laterally confining at least one active mesa which includes an upper section of the drift region; and an electrically floating barrier region of an opposite conductivity type as the drift region and spatially confined, in and against the vertical direction, by the drift region. A total volume of all active mesas is divided into first and second shares, the first share not laterally overlapping with the barrier region and the second share laterally overlapping with the barrier region. The first share carries the load current at least within a range of 0% to 100% of a nominal load current. The second share carries the load current if the load current exceeds at least 0.5% of the nominal load current.

Power semiconductor device having a barrier region

A method of manufacturing a semiconductor device includes: providing a silicon carbide substrate that includes device regions and a grid-shaped kerf region laterally separating the device regions; forming a mold structure on a backside surface of the grid-shaped kerf region; forming backside metal structures on a backside surface of the device regions; and separating the device regions, wherein parts of the mold structure form frame structures laterally surrounding the backside metal structures.

Method of manufacturing a semiconductor device having frame structures laterally surrounding backside metal structures

A method for processing a wide band gap semiconductor wafer includes: depositing a support layer including semiconductor material at a back side of a wide band gap semiconductor wafer, the wide band gap semiconductor wafer having a band gap larger than the band gap of silicon; depositing an epitaxial layer at a front side of the wide band gap semiconductor wafer; and splitting the wide band gap semiconductor wafer along a splitting region to obtain a device wafer comprising at least a part of the epitaxial layer, and a remaining wafer comprising the support layer.

Methods for processing a wide band gap semiconductor wafer using a support layer and methods for forming a plurality of thin wide band gap semiconductor wafers using support layers

A method of manufacturing a semiconductor device is provided. The method includes forming a carbon structure on a handle substrate at a first surface of the handle substrate. The method further includes attaching a first surface of a semiconductor substrate to the first surface of the handle substrate. The method further includes processing the semiconductor substrate and performing a separation process to separate the handle substrate from the semiconductor substrate. The separation process comprises modifying the carbon structure.

Method of manufacturing a semiconductor device and semiconductor wafer

A method of forming a current measurement device includes providing a glass substrate having first and second substantially planar surfaces that are opposite one another, forming a plurality of through-vias in the glass substrate that each extend between the first and second substantially planar surfaces, and forming conductive tracks on the glass substrate that connect adjacent ones of the through-vias together. Forming the plurality of through-vias includes applying radiation to the glass substrate, and the conductive tracks and the through-vias collectively form a coil structure in the glass substrate.

Rogowski coil integrated in glass substrate

A method of forming a semiconductor device, including forming a first semiconductor layer on a semiconductor substrate, the first semiconductor layer being of the same dopant type as the semiconductor substrate, the first semiconductor layer having a higher dopant concentration than the semiconductor substrate, increasing the porosity of the first semiconductor layer, first annealing the first semiconductor layer at a temperature of at least 1050&#xb0; C., forming a second semiconductor layer on the first semiconductor layer and separating the second semiconductor layer from the semiconductor substrate by splitting within the first semiconductor layer.

Methods for forming a semiconductor device

A method includes providing a layer of porous silicon carbide supported by a silicon carbide substrate, providing a layer of epitaxial silicon carbide on the layer of porous silicon carbide, forming a plurality of semiconductor devices in the layer of epitaxial silicon carbide, and separating the substrate from the layer of epitaxial silicon carbide at the layer of porous silicon carbide. Additional methods are described.

Methods of re-using a silicon carbide substrate

Growing community of inventors

Villach, Austria

Francisco Javier Santos Rodriguez