Az Electronic Materials USA Corp.

Lucent Technologies Inc.

At&t Bell Laboratories

Other

Orthogonal, Inc.

Merck Patent Gmbh

Agere Systems Inc.

Triquint Technology Holding Co.

Francis Michael Houlihan

Omkaram Nalamasu

Ralph R Dammel

M Dalil Rahman

Elsa Reichmanis

David J Abdallah

Munirathna Padmanaban

Mark O Neisser

Raj Sakamuri

Thomas X Neenan

Thomas Ingolf Wallow

Alberto D Dioses

Douglas Robert Robello

Terrence Robert O'Toole

Edwin Arthur Chandross

Diane Carol Freeman

John Andrew DeFranco

Charles Warren Wright

Frank Xavier Byrne

Mark Anthony Paczkowski

James Alexander Liddle

Debra A Simoff

Clement Anyadiegwu

Sandra Rubsam

David L Rentkiewicz

Shinji Miyazaki

Andrew R Romano

Meng Li

Evelyn Chin

Howard Edan Katz

Ping-Hung Lu

Arturo Hale

Valerie Jeanne Kuck

Joseph E Oberlander

Douglas S McKenzie

Robert M Atkins

Takanori Kudo

SangHo Lee

Lin Zhang

Madanagopal V Kunnavakkam

Ganesh Venugopal

Marcia Lea Schilling

Srinivasan Chakrapani

Ruzhi Zhang

Mary Ellen Galvin-Donoghue

Xina Shu-Wen Quan

WooKyu Kim

Afshin Partovi

Edward W Ng

Richard Tobias Olsson

Janet Mihoko Kometani

Allen H Gabor

Ulrike Varlemann

Nanze Patrick Wang

Larry Flack Thompson

Allen G Timko

Il'Ya L Rushkin

Douglas Mckenzie

A photopolymer layer is formed on an organic device substrate and exposed to patterned radiation. The photopolymer layer includes a photopolymer comprising at least a first repeating unit having an acid-catalyzed, solubility-altering reactive group, wherein the total fluorine content of the photopolymer is less than 30% by weight. The pattern exposed photopolymer is contacted with a developing agent, such as a developing solution, to remove unexposed photopolymer, thereby forming a developed structure having a first pattern of exposed photopolymer covering the substrate and a complementary second pattern of uncovered substrate corresponding to the unexposed photopolymer. The developing agent comprises at least 50% by volume of a hydrofluoroether developing solvent.

Method of patterning a device

Developable bottom antireflective coating compositions are provided.

Coating compositions

The invention relates to a photoimageable antireflective coating composition capable of forming a pattern by development in an aqueous alkaline solution, comprising, (i) a polymer A soluble in a coating solvent and comprises a chromophore, a crosslinking moiety, and optionally a cleavable group which under acid or thermal conditions produces a functionality which aids in the solubility of the polymer in an aqueous alkaline solution and; (ii) at least one photoacid generator; (iii) a crosslinking agent; (iv) optionally, a thermal acid generator; (v) a polymer B which is soluble in an aqueous alkaline solution prior to development, where polymer B is non-miscible with polymer A and soluble in the coating solvent, and; (vi) a coating solvent composition, and (vii) optionally, a quencher. The invention also relates to a process for imaging the antireflective coating.

Positive-working photoimageable bottom antireflective coating

Coating composition

The present invention discloses novel bottom anti-reflective coating compositions where a coating from the composition has an etch rate that can be regulated by the etch plate temperature.

Antireflective coating compositions

Base soluble polymer comprising at least one sulfonyl group where at least one carbon atom at &#x3b1;-position and/or &#x3b2;-position and/or &#x3b3;-position with respect to the sulfonyl group has a hydroxyl group, where the hydroxyl group is protected or unprotected are described.

Base soluble polymers for photoresist compositions

Bottom antireflective coating compositions

The present invention relates to an organic spin coatable antireflective coating composition comprising a polymer comprising at least one unit with 3 or more fused aromatic rings in the backbone of the polymer and at least one unit with an aliphatic moeity in the backbone of the polymer. The invention further relates to a process for imaging the present composition.

Antireflective coating composition comprising fused aromatic rings

The present application relates to a compound of formula A-X&#x2014;B, where (i) A-X&#x2014;B form an ionic compound Ai Xi Bi where Ai and Bi are each individually an organic onium cation; and Xi is anion of the formula Q-R&#x2014;SOor (ii) A-X&#x2014;B form a non-ionic compound Ac-Xc-Bc, where Ai, Bi, Q, R, Ac, Bc, and Xc are defined herein. The compounds are useful as photoactive materials.

Photoactive compounds

The present invention relates to a novel chemically amplified photoresist, which is sensitive to wavelengths between 300 nm and 100 nm, and comprises a) a novel polymer comprising a sulfone group pendant from a polymer backbone that is insoluble in an aqueous alkaline solution and comprises at least one acidic moiety protected with acid labile group, and b) a compound capable of producing an acid upon irradiation. The invention also relates to a process of imaging the novel positive photoresist composition.

Photoresist composition for deep UV and process thereof

The present application relates to a compound of formula A-X&#x2014;B, where (i)A-X&#x2014;B form an ionic compound Ai Xi Bi where Ai and Bi are each individually an organic onium cation; and Xi is anion of the formula Q-R&#x2014;SOor (ii)A-X&#x2014;B form a non-ionic compound Ac-Xc-Bc, where Ai, Bi, Q, R, Ac, Bc, and Xc are defined herein. The compounds are useful as photoactive materials.

The present invention relates to a process for imaging deep ultraviolet (uv) photoresists with a topcoat using deep uv immersion lithography. The invention further relates to a topcoat composition comprising a polymer with at least one ionizable group having a pKranging from about &#x2212;9 to about 11. The invention also relates to a process for imaging a photoresist with a top barrier coat to prevent contamination of the photoresist from environmental contaminants.

Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof

Growing community of inventors

Millington, NJ, United States of America

Francis Michael Houlihan