Redlen Technologies, Inc.

Francis Joseph Kumar

Michael K Jackson

Jason MacKenzie

Krzysztof Iniewski

Pramodha Marthandam

James Balcom

David Giles

Yuxin Song

Saied Taherion

An ionizing radiation detector includes a p-type semiconductor single crystal substrate having first and second major planar opposing surfaces, where the p-type semiconductor single crystal substrate is doped with n-type dopant atoms, and where a concentration of deep level acceptor defects is greater than a concentration of the n-type dopant atoms in the p-type semiconductor single crystal substrate; a cathode electrode on the first major planar opposing surface of the p-type semiconductor single crystal substrate, and a plurality of anode electrodes on the second major planar opposing surface of the p-type semiconductor single crystal substrate.

P-type CZT radiation detector for high flux applications

A radiation detector tile includes a single crystal compound semiconductor tile having a zinc blende crystal structure, a (111) plane first major (i.e. prominent) surface and four side surfaces which are rotated by an angle of 13° to 17° to a {110} family of planes. The tile may be formed by dicing a (111) oriented wafer at directions which are rotated by an angle of 13° to 17° from <110> in-plane slipping directions to reduce or eliminate the side surface chipping and sub surface dislocation defects.

Compound semiconductor x-ray detector tiles and method of dicing thereof

An electro-optic modulator includes a doped semiconductor crystal having a crystallographic surface having an amplitude modulation orientation, a first metal electrode located on a first surface of the doped semiconductor crystal, a second metal electrode located on a second surface of the doped semiconductor crystal, and accumulation space charge regions located within surface regions of the doped semiconductor crystal that are proximal to the first metal electrode and the second metal electrode and including excess charge carriers of a same type as majority charge carriers of the doped semiconductor crystal.

Fast-switching electro-optic modulators and method of making the same

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Victoria, Canada

Francis Joseph Kumar