USA As Represented by Secretary of the Navy

Westinghouse Electric Corporation

Intersil Corporation

Other

The Charles Stark Draper Laboratory, Inc.

Intersil Americas Inc.

Francis J Kub

Karl D Hobart

Travis J Anderson

Andrew D Koehler

Charles R Eddy, Jr

Michael Anthony Mastro

Marko J Tadjer

Rachael L Myers-Ward

Eugene A Imhoff

Jennifer K Hite

Boris N Feigelson

Boris N Feygelson

Virginia D Wheeler

John M Neilson

Marc Currie

Victor A Temple

Marc Steven Weinberg

Jonathan Jay Bernstein

Nathan Bluzer

Eugene H Cook

Tatyana I Feygelson

Jordan D Greenlee

Henry F Gray

Donald R Lampe

Jonathan L Shaw

Joshua D Caldwell

Bernard F Phlips

Mark E Twigg

Phillip E Thompson

Neeraj Nepal

Scooter David Johnson

Nelson Garces

Ingham A Mack

Sandra C Hangarter

Eric W Justh

Geoffrey M Foster

Eric A Wulf

Lunet E Luna

Mario Ancona

Marvin H White

Alan G Jacobs

Orest J Glembocki

James A Wollmershauser

Robert E Stahlbush

Harold L Hughes

James E Butler

Alfred Paul Turley

Sharka M Prokes

Nadeemullah A Mahadik

Gerald M Borsuk

David J Godbey

Kedar Manandhar

Keith K Moon

Eric D Justh

Robert H Esser

Kendrick X Liu

David Shahin

William M Evey

A technique for selective-area diffusion doping of III-N epitaxial material layers and for fabricating power device structures utilizing this technique. Dopant species such as Mg are introduced into the III-N material layer and are diffused into the III-N material by annealing under stable or metastable conditions. The dopant species can be introduced via deposition of a metal or alloy layer containing such species using sputtering, e-beam evaporation or other technique known to those skilled in the art. The dopant material layer is capped with a thermally stable layer to prevent decomposition and out-diffusion, and then is annealed under stable or metastable conditions to diffuse the dopant into the III-N material GaN without decomposing the surface.

Selective area diffusion doping of III-N materials

A light controlled semiconductor switch (LCSS), method of making, and method of using are provided. In embodiments, a vertical LCSS includes: a semiconductor body including a photoactive layer of gallium nitride (GaN) doped with carbon; a first electrode in contact with a first surface of the semiconductor body, the first electrode defining an area through which light energy from at least one light source can impinge on the first surface; and a second electrode in contact with a second surface of the semiconductor body opposed to the first surface, wherein the vertical LCSS is configured to switch from a non-conductive off-state to a conductive on-state when the light energy impinging on the semiconductor body is sufficient to raise electrons within the photoactive layer into a conduction band of the photoactive layer.

Low resistance photoconductive semiconductor switch (PCSS)

Light controlled switching modules are provide. In embodiments, a light controlled switching module includes: a housing; a light controlled semiconductor switch mounted to the housing, the light controlled semiconductor switch including a semiconductor body; at least one light source mounted to the housing in a spaced relationship from the light controlled semiconductor switch and positioned to direct light emitted from the at least one light source toward the semiconductor body; and first and second electrodes mounted to the housing and connected to the light controlled semiconductor switch, wherein the first and second electrodes are configured to have variable resistance between the first and the second electrode.

Light controlled switch module

A method of fabricating suspended beam silicon carbide microelectromechanical (MEMS) structure with low capacitance and good thermal expansion match. A suspended material structure is attached to an anchor material structure that is direct wafer bonded to a substrate. The anchor material structure and the suspended material structure are formed from either a hexagonal single-crystal SiC material, and the anchor material structure is bonded to the substrate while the suspended material structure does not have to be attached to the substrate. The substrate may be a semi-insulating or insulating SiC substrate. The substrate may have an etched recess region on the substrate first surface to facilitate the formation of the movable suspended material structures. The substrate may have patterned electrical electrodes on the substrate first surface, within recesses etched into the substrate.

Silicon carbide structure, device, and method

Current conducting devices and methods for their formation are disclosed. Described are vertical current devices that include a substrate, an n-type material layer, a plurality of p-type gates, and a source. The n-type material layer disposed on the substrate and includes a current channel. A plurality of p-type gates are disposed on opposite sides of the current channel. A source is disposed on a distal side of the current channel with respect to the substrate. The n-type material layer comprises beta-gallium oxide.

Heterojunction devices and methods for fabricating the same

A high electron mobility transistor (HEMT) and method of producing the same are provided. The HEMT includes a barrier layer formed on a GaN layer. The HEMT also includes a ZrOgate dielectric layer formed by either a ZTB precursor, a TDMA-Zr precursor, or both. The HEMT may also include a recess in the barrier layer in the gate region of the HEMT. The HEMTs may operate in an enhancement mode.

High electron mobility transistors and methods for fabricating the same

A method of cleaving includes providing a substrate. Optionally, the substrate includes &#x3b2;-gallium oxide, hexagonal zinc sulfide, or magnesium selenide. The substrate includes at least one natural cleave plane and a crystallinity. The substrate is cleaved along a first natural cleave plane of the at least one natural cleave plane. The cleaving the substrate along the first natural cleave plane includes the following. A micro-crack is generated in the substrate while maintaining the crystallinity adjacent to the micro-crack by generating a plurality of phonons in the substrate, the micro-crack comprising a micro-crack direction along the first natural cleave plane. The micro-crack is propagated along the first natural cleave plane while maintaining the crystallinity adjacent to the micro-crack. Optionally, generating a micro-crack in the substrate by generating a plurality of phonons in the substrate includes generating the plurality of phonons by electron-hole recombination. Optionally, the electron-hole recombination includes non-radiative electron-hole recombination.

UV laser slicing of &#x3b2;-GaOby micro-crack generation and propagation

An enhanced symmetric multicycle rapid thermal annealing process for removing defects and activating implanted dopant impurities in a III-nitride semiconductor sample. A sample is placed in an enclosure and heated to a temperature Tunder an applied pressure Pfor a time t. While the heating of the sample is maintained, the sample is subjected to a series of rapid laser irradiations under an applied pressure Pand a baseline temperature T. Each of the laser irradiations heats the sample to a temperature Tabove its thermodynamic stability limit. After a predetermined number of temperature pulses or a predetermined period of time, the laser irradiations are stopped and the sample is brought to a temperature Tand held at Tfor a time tto complete the annealing.

Implanted dopant activation for wide bandgap semiconductor electronics

Electromechanical device structures are provided, as well as methods for forming them. The device structures incorporate at least a first and second substrate separated by an interface material layer, where the first substrate comprises an anchor material structure and at least one suspended material structure, optionally a spring material structure, and optionally an electrostatic sense electrode. The device structures may be formed by methods that include providing an interface material layer on one or both of the first and second substrates, bonding the interface materials to the opposing first or second substrate or to the other interface material layer, followed by forming the suspended material structure by etching.

Silicon carbide microelectromechanical structure, device, and method

A method for making transparent nanocomposite ceramics and other solid bulk materials from nanoparticle powders and transparent nanocomposite ceramics and other solid bulk materials formed using that method. A nanoparticle powder is placed into a reaction chamber and is treated to produce a clean surface powder. The clean surface powder is coated with a second material by means of p-ALD to produce core/shell or core multi shell nanoparticles having a coating or coatings of a other material surrounding the nanoparticle. The core/shell nanoparticles are cleaned and formed into green compact which is sintered to produce a transparent nanocomposite ceramic or other solid bulk material consisting of nanoparticles or core/shell nanoparticles uniformly embedded in a matrix of a different material, particularly in a matrix of a different ceramic material, formed by outer shell of initial core/shell. All steps are performed without exposing the material to the ambient.

Transparent nanocomposite ceramics built from core/shell nanoparticles

A method of growing crystalline materials on two-dimensional inert materials comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material. A crystalline material grown on a two-dimensional inert material made from the process comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material.

Growth of crystalline materials on two-dimensional inert materials

A device structure and method for improving thermal management in highly scaled, high power electronic and optoelectronic devices such as GaN FET and AlGaN/GaN HEMT devices by implementing diamond air bridges into such devices to remove waste heat. The diamond air bridge can be formed from a polycrystalline diamond material layer which can be grown on the surface of a dielectric material layer, on the surface of a III-nitride material, or on the surface of a diamond polycrystalline nucleation layer, and may be optimized to have a high thermal conductivity at the growth interface with the underlying material.

Diamond air bridge for thermal management of high power devices

Material structures and methods for etching hexagonal, single-crystal silicon carbide (SiC) materials are provided, which include selection of on-axis or near on-axis hexagonal single-crystal SiC material as the material to be etched. The methods include etching of SiC bulk substrate material, etching of SiC material layers bonded to a silicon oxide layer, etching of suspended SiC material layers, and etching of a SiC material layer anodically bonded to a glass layer. Plasma-etched hexagonal single-crystal SiC materials of the invention may be used to form structures that include, but are not limited to, microelectromechanical beams, microelectromechanical membranes, microelectromechanical cantilevers, microelectromechanical bridges, and microelectromechanical field effect transistor devices. The material structures and methods of the invention beneficially provide improved etch symmetry, improved etch straightness, improved sidewall straightness, improved sidewall smoothness, and reduced sidewall wander compared to etched four degree off-axis SiC materials.

Material structure and method for deep silicon carbide etching

Growing community of inventors

Arnold, MD, United States of America

Francis J Kub