International Business Machines Corporation

Francis G Trudeau

Yun-Yu Wang

Rajarao Jammy

Johnathan E Faltermeier

Kris V Srikrishnan

Paul A Totta

Philip L Flaitz

Radhika Srinivasan

Joseph J Gajda

Jeffery L Hurd

Dinah S Weiss

A process for forming a small grain structure in a material within a semiconductor device near the interface of an adjacent dissimilar material, to result in a highly diffusive grain structure. The highly diffusive grain structure formed within one material enhances diffusion of a dopant impurity, and provides for improved dopant control in an adjacent dissimilar material.

Dopant control of semiconductor devices

An integrated circuit chip including a first and a higher second surface levels with an abrupt sidewall step transition therebetween, and having a first layer of a first conductive material disposed over the first surface level and over the second surface level, but terminating on the first surface level in a first end portion which extends up to but does not touch the sidewall. This end portion comprises a conductive material which has been converted to an insulator. A second layer of a second conductive material is disposed on top of the first conductive layer with essentially no conductive material conversion to insulator therein adjacent to the abrupt sidewall transition. In a preferred embodiment, the conductive material is an alloy of aluminum and the end portion is aluminum oxide.

Chip contacts without oxide discontinuities

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Wappingers Falls, NY, United States of America

Francis G Trudeau