X-fab Semiconductor Foundries Ag

X-fab France

Francis Domart

Pascal Costaganna

Nicolas Pons

Philippe Trovati

Gregory U'Ren

A transistor carried by a substrate comprising an active layer, the transistor comprising: at least one source area and at least one drain area; at least one electrical contact area; at least one conduction channel; at least one gate; wherein the gate comprises: a longitudinal portion; a transverse portion extending on either side of a portion of the active layer and comprising: at least a first portion extending beyond a portion of a first side of the portion of the active layer on a first extension dimension I; at least a second portion extending beyond a portion of a second side of the portion of the active layer on a second extension dimension I; and in that: I&#x3e;Iwith I&#x2260;0.

Transistor and its manufacturing process

The present invention relates to a method for forming an electronic device intended to accommodate at least one fully depleted transistor of the FDSOI type and at least one partially depleted transistor of the PDSOI type, from a stack of layers () comprising at least one insulating layer () topped with at least one active layer () made of a semiconductor material, the method comprising at least one step of dry etching and one step of height adjustment between at least two etched elements.

Growing community of inventors

Mennecy, France

Francis Domart