Semiconductor Components Industries, LLC

Motorola Corporation

Francine Y Robb

Stephen P Robb

Prasad Venkatraman

Gordon M Grivna

Zia Hossain

Jeffrey Pearse

Ali Salih

Mingjiao Liu

George Chang

Balaji Padmanabhan

Israel A Lesk

John Michael Parsey, Jr

David M Heminger

Kirk K Huang

Thomas Keena

Ki Chang

Lewis E Terry

Frank S d'Aragona

Carroll Casteel

Robert Bruce Davies

Sudhama C Shastri

Evgueniy Nikolov Stefanov

Peter J Zdebel

Zheng Shen

Raymond C Wells

Paul J Groenig

Thomas E Wood

Rene Escoffier

Robert J Johnsen

Emmanuel Saucedo-Flores

William E Gandy, Jr

F J Robinson

Li-Hsin Chang

Alfredo Ochoa

Frank T Secco d'Aragona

Jean-Michel Reynes

Bridget Svechovsky

Robert F Hightower

In one embodiment, a vertical insulated-gate field effect transistor includes a feature embedded within a control electrode. The feature is placed within the control electrode to induce stress within predetermined regions of the transistor.

Semiconductor device with enhanced mobility and method

In one embodiment, a vertical power transistor is formed on a semiconductor substrate with other transistors. A portion of the semiconductor layer underlying the vertical power transistor is doped to provide a low on-resistance for the vertical power transistor.

Method of forming an integrated power device and structure

In one embodiment, a transistor is formed to have a first current flow path to selectively conduct current in both directions through the transistor and to have a second current flow path to selectively conduct current in one direction.

Method of forming a bi-directional transistor with by-pass path

In one embodiment, an MOS transistor is formed with trench gates. The gate structure of the trench gates generally has a first insulator that has a first thickness in one region of the gate and a second thickness in a second region of the gate.

Method of forming an MOS transistor and structure therefor

A semiconductor component that includes a Schottky device, an edge termination structure, a non-Schottky semiconductor device, combinations thereof and a method of manufacturing the semiconductor component. A semiconductor material includes a first epitaxial layer disposed on a semiconductor substrate and a second epitaxial layer disposed on the first epitaxial layer. The second epitaxial layer has a higher resistivity than the semiconductor substrate. A Schottky device and a non-Schottky semiconductor device are manufactured from the second epitaxial layer. In accordance with another embodiment, a semiconductor material includes an epitaxial layer disposed over a semiconductor substrate. The epitaxial layer has a higher resistivity than the semiconductor substrate. A doped region is formed in the epitaxial layer. A Schottky device and a non-Schottky semiconductor device are manufactured from the epitaxial layer.

Semiconductor component and method of manufacture

Bi-directional transistor with by-pass path and method therefor

Transient voltage suppressor and method for manufacturing the transient voltage suppressor having a dopant or carrier concentration in a portion of a gate region near a Zener region that is different from a dopant concentration in a portion of a gate region that is away from the Zener region.

Transient voltage suppressor and methods

In one embodiment, the ESD device uses highly doped P and N regions deep within the ESD device to form a zener diode that has a controlled breakdown voltage.

Method of forming low capacitance ESD device and structure therefor

A semiconductor component resistant to the formation of a parasitic bipolar transistor and a method for manufacturing the semiconductor component using a reduced number of masking steps. A semiconductor material of N-type conductivity having a region of P-type conductivity is provided. A doped region of N-type conductivity is formed in the region of P-type conductivity. Trenches are formed in a semiconductor material and extend through the regions of N-type and P-type conductivities. A field oxide is formed from the semiconductor material such that portions of the trenches extend under the field oxide. The field oxide serves as an implant mask in the formation of source regions. Body contact regions are formed from the semiconductor material and an electrical conductor is formed in contact with the source and body regions. An electrical conductor is formed in contact with the backside of the semiconductor material.

Semiconductor component

Growing community of inventors

Fountain Hills, AZ, United States of America

Francine Y Robb