Applied Materials, Inc.

Francimar Campana-Schmitt

Srinivas D Nemani

Li-Qun Xia

Ellie Y Yieh

Dian Sugiarto

Ping Xu

Jia Lee

Carsten Schimanke

A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.

Method of depositing dielectric films

A method of reducing plasma-induced damage in a substrate, comprising providing a post-deposition ramp down of a plasma source power used in generating a plasma for substrate processing.

Method of reducing plasma-induced damage

Growing community of inventors

Milpitas, CA, United States of America

Francimar Campana-Schmitt