Stmicroelectronics S.r.l.

Francesco Ciovacco

Roberto Colombo

Simone Alba

Chiara Savardi

A method for manufacturing insulating structures in a semiconductor substrate includes forming a first insulating layer on the semiconductor substrate, forming a stop layer on the first insulating layer, and forming a barrier layer on the stop layer. The barrier layer is selective with respect to the stop layer. A screen layer is formed on the barrier layer. A portion of the screen layer is selectively removed for forming an opening therethrough for exposing a portion of the barrier layer. The exposed barrier layer is removed for exposing a portion of the stop layer. The exposed stop layer is removed for exposing a portion of the semiconductor substrate. The method further includes removing the remaining barrier layer, and removing a portion of the exposed semiconductor substrate for forming a trench therein.

Method for the fabrication of isolation structures

A method for manufacturing semiconductor-integrated electronic circuits includes: depositing an auxiliary layer on a substrate; depositing a layer of screening material on the auxiliary layer; selectively removing the layer of screening material to provide a first opening in the layer of screening material and expose an area of the auxiliary layer; and removing this area of the auxiliary layer to form a second opening in the auxiliary layer, whose cross-section narrows toward the substrate to expose an area of the substrate being smaller than the area exposed by the first opening.

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Milan, Italy

Francesco Ciovacco