Qualcomm Incorporated

Sgs-Thomson Microelectronics Limited

Stmicroelectronics Gmbh

Fairchild Semiconductor Corporation

Other

Francesco Carobolante

Fabio Alessio Marino

Qingqing Liang

Narasimhulu Kanike

Paolo Menegoli

Seong Heon Jeong

William Henry Von Novak, Iii

Mark E Rohrbaugh

Linda Stacey Irish

Joseph Maalouf

Sumukh Shevde

Ermanno Pace

Matthew Michael Nowak

Sinan Goktepeli

Aristotele Hadjichristos

Aleksandar Prodic

Charles Edward Wheatley

Karl M Schlager

Xia Li

Jonghae Kim

Changhan Hobie Yun

Mario Francisco Velez

Chengjie Zuo

Gengming Tao

Ryan Tseng

Mark David White, Ii

Mei-Li Chi

Yigang Guo

Douglas Alan Hawks

Zeljko Grbo

Lawrence D Smith

Saeed Nejatali

Ali J Rastegar

Seung Hyuk Kang

Bin Yang

Shiqun Gu

Richard Hammond

George P Imthurn

Virginia Walker Keating

Zhen Ning Low

Ranadeep Dutta

David George Fern

Scott W Cameron

Edward Kallal

Cody Wheeland

Stephen W Bryson

Gabriel Isaac Mayo

Kevin Douglas Lee

Sreenivas Kasturi

Plamen Vassilev Kolev

Solomon K Ng

Curtis Gong

Li-Hsin D Lu

Michael W Null

Mark J McCormack

Sandro Cerato

Curtis Robinson

Weston Daniel Braun

Rafael S Lopez

Martin Stone

Greg Bachmanek

Abdolhossein Nejatali

Edward Kenneth Kallal

Seon Heon Jeong

Mark White Ii

William Henry Von Novak Iii

Iii William Henry Von Novak

Gregory Bachmanek

Sumukh Ashok Shevde

Joseph Najib Maalouf

Certain aspects of the present disclosure provide semiconductor variable capacitors. One example semiconductor variable capacitor generally includes a semiconductor region, a first insulator region disposed below the semiconductor region, a first non-insulative region disposed below the first insulator region, a second non-insulative region disposed adjacent to the semiconductor region, and a third non-insulative region disposed adjacent to the semiconductor region, wherein the semiconductor region is disposed between the second non-insulative region and the third non-insulative region. In certain aspects, the semiconductor variable capacitor may include a second insulator region disposed above the semiconductor region and a second semiconductor region disposed above the second insulator region.

Buried oxide transcap devices

Certain aspects of the present disclosure provide semiconductor variable capacitors. One example semiconductor variable capacitor generally includes a semiconductor region, an insulative layer, and a first non-insulative region, the insulative layer being disposed between the semiconductor region and the first non-insulative region. In certain aspects, the semiconductor variable capacitor may also include a second non-insulative region disposed adjacent to the semiconductor region, and a third non-insulative region disposed adjacent to the semiconductor region, the second non-insulative region and the third non-insulative region having different doping types. In certain aspects, the semiconductor variable capacitor may also include an implant region disposed between the semiconductor region and the insulative layer. The implant region may be used to adjust the flat-band voltage of the semiconductor variable capacitor.

Variable capacitor flat-band voltage engineering

A variable capacitor includes a mesa on a substrate. The mesa has multiple III-V semiconductor layers and includes a first side and a second side opposite the first side. The first side has a first sloped portion and a first horizontal portion. The second side has a second sloped portion and a second horizontal portion. A control terminal is on a third side of the mesa. A first terminal is on the first side of the mesa. The first terminal is disposed on the first horizontal portion and the first sloped portion. A second terminal is also on the substrate.

Variable capacitor

Certain aspects of the present disclosure provide a semiconductor device. One example semiconductor device generally includes a semiconductor region, an insulative layer, a first terminal, and a first non-insulative region coupled to the first terminal, the insulative layer being disposed between the first non-insulative region and the semiconductor region. In certain aspects, the insulative layer is disposed adjacent to a first side of the semiconductor region. In certain aspects, the semiconductor device also includes a second terminal, and a first silicide layer coupled to the second terminal and disposed adjacent to a second side of the semiconductor region, the first side and the second side being opposite sides of the semiconductor region.

Back silicided variable capacitor devices

Exemplary embodiments of the present disclosure are related to a wireless power resonator and method that includes a wireless power transmit element. The wireless power transmit element may include a substantially planar transmit antenna configured to generate a magnetic field and formed from a conductive trace including a plurality of distributed inductive elements along the conductive trace. The transmit element may further include a filter formed from selected ones of the plurality of distributed inductive elements of the planar transmit antenna and configured to generate at least one frequency response.

Wireless power transmit resonator

Systems, methods and apparatus are disclosed for wireless power transfer using multiple receive coils. In one aspect a wireless power receiver is provided that is configured to receive wireless power from a wireless power transmit coil. The wireless power receiver includes a first receive coil having a first mutual coupling with the transmit coil. The wireless power receiver further includes a second receive coil having a second mutual coupling with the transmit coil. The wireless power receiver further includes a load coupled to at least one of the first receive coil and the second receive coil for receiving the wireless power.

Wireless power receiver with multiple receiver coils

Certain aspects of the present disclosure provide a semiconductor device. One example semiconductor device generally includes a first semiconductor region; a first non-insulative region disposed adjacent to a first lateral side of the first semiconductor region; a second non-insulative region disposed adjacent to a second lateral side of the first semiconductor region, the second lateral side being opposite to the first lateral side; a second semiconductor region disposed adjacent to a third lateral side of the first semiconductor region, the second semiconductor region and the first semiconductor region having at least one of different doping types or different doping concentrations; an insulative layer adjacent to a top side of the first semiconductor region; and a third non-insulative region, the insulative layer being disposed between the third non-insulative region and the first semiconductor region.

Lateral devices in silicon-on-insulator (SOI) technology

Certain aspects of the present disclosure provide a memory device. One example memory device generally includes a first semiconductor region having a first region, a second region, and a third region, the second region being between the first region and the third region and having a different doping type than the first region and the third region. In certain aspects, the memory device also includes a first non-insulative region, a first insulative region being disposed between the first non-insulative region and the first semiconductor region. In certain aspects, the memory device may include a second non-insulative region, and a second insulative region disposed between the second region and the second non-insulative region, wherein the first insulative region and the second insulative region are disposed adjacent to opposite sides of the second region.

Non-volatile memory structure in silicon-on-insulator (SOI) technology

A method and system for providing wireless power transfer through a metal object is provided. In one aspect, an apparatus for wirelessly receiving power via a magnetic field is provided. The apparatus includes a metal cover including an inner portion and an outer portion. The outer portion is configured to form a loop around the inner portion of the metal cover. The outer portion is configured to inductively couple power via the magnetic field. The apparatus includes a receive circuit electrically coupled to the outer portion and configured to receive a current from the outer portion generated in response to the magnetic field. The receive circuit is configured to charge or power a load based on the current.

Wireless power transfer through a metal object

Certain aspects of the present disclosure generally relate to a semiconductor device and techniques for fabricating a semiconductor device. In certain aspects, the semiconductor device includes a fin, a first non-insulative region disposed adjacent to a first side of the fin, and a second non-insulative region disposed adjacent to a second side of the fin. In certain aspects, the first non-insulative region and the second non-insulative region are separated by a trench, at least a portion of the trench being filled with a dielectric material disposed around the fin.

Metal-oxide semiconductor (MOS) device with thick oxide

Certain aspects of the present disclosure generally relate to a semiconductor variable capacitor, and techniques for fabricating the same, implemented using a threshold voltage implant region. For example, the semiconductor variable capacitor generally includes a first non-insulative region disposed above a first semiconductor region, a second non-insulative region disposed above the first semiconductor region, and a threshold voltage (Vt) implant region interposed between the first non-insulative region and the first semiconductor region and disposed adjacent to the second non-insulative region. In certain aspects, the semiconductor variable capacitor also includes a control region disposed above the first semiconductor region such that a capacitance between the first non-insulative region and the second non-insulative region is configured to be adjusted by varying a control voltage applied to the control region.

Semiconductor variable capacitor using threshold implant region

An electronic apparatus may include an electrically conductive body configured to magnetically couple to a first magnetic field. A first tuning element may be connected to the electrically conductive body. An electrically conductive coil may be wound about an opening defined by the electrically conductive body, and configured to magnetically couple to a second magnetic field.

Wireless power transfer in an electronic device having a tuned metallic body

Certain aspects of the present disclosure provide a semiconductor variable capacitor. The semiconductor variable capacitor generally includes a semiconductor region, an insulative layer disposed above the semiconductor region, and a first non-insulative region disposed above the insulative layer. In certain aspects, a second non-insulative region is disposed adjacent to the semiconductor region, and a control region is disposed adjacent to the semiconductor region such that a capacitance between the first non-insulative region and the second non-insulative region is configured to be adjusted by varying a control voltage applied to the control region. In certain aspects, the first non-insulative region is disposed above a first portion of the semiconductor region and a second portion of the semiconductor region, and the first portion and the second portion of the semiconductor region are disposed adjacent to a first side and a second side, respectively, of the control region or the second non-insulative region.

Layout techniques for transcap area optimization

An apparatus may include an electrically conductive body to magnetically couple to a first magnetic field. A first tuning element may be connected to the electrically conductive body. An electrically conductive coil may be wound about an opening in the electrically conductive body, and configured to magnetically couple to a second magnetic field.

EMI filtering and wireless power transfer in an electronic device using a tuned metallic body

Exemplary embodiments are directed to a power controller. A method may include comparing a summation voltage comprising a sum of an amplified error voltage and a reference voltage with an estimated voltage to generate a comparator output signal. The method may also include generating a gate drive signal from the comparator output signal and filtering a signal coupled to a power stage to generate the estimated voltage.

Power supply controller

Growing community of inventors

San Diego, CA, United States of America

Francesco Carobolante