Ucl Business Plc

Francesca Pozzi

Alwyn John Seeds

Huiyun Liu

A semiconductor device is disclosed comprising: a substrate having a surface comprising germanium; a layer of gallium on said surface; and a layer of gallium arsenide on the gallium covered surface. The semiconductor heterostructure of gallium arsenide on germanium is fabricated by the steps of: protecting by a shutter a surface comprising germanium in an environment having a partial pressure of arsenic less than 10torr; epitaxially growing a layer of gallium on the said surface immediately after exposure of said surface; and epitaxially growing a layer of gallium arsenide on the gallium covered surface.

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London, United Kingdom

Francesca Pozzi