Stmicroelectronics S.r.l.

Francesca Canali

Simone Alba

Enrico Bellandi

Lorena Beghin

Carmelo Romeo

Francesco Cazzaniga

Claudio Savoia

Luca Riva

A process for etching a dielectric layer, including the steps of forming, over the dielectric layer, a layer of polysilicon, forming over the layer of polysilicon a photoresist mask layer, etching the layer of polysilicon using the photoresist mask layer as an etching mask for selectively removing the layer of polysilicon, removing the photoresist mask layer from over the layer of polysilicon, etching the dielectric layer using the layer of polysilicon as a mask. Subsequently, the layer of polysilicon is converted into a layer of a transition metal silicide, and the layer of transition metal silicide is etched for selectively removing the latter from over the dielectric layer.

Process for the definition of openings in a dielectric layer

Method of measuring the thickness of a layer of silicon damaged by plasma etching

Growing community of inventors

Saronno, Italy

Francesca Canali