USA As Represented by Secretary of the Navy

Frances Hellman

Xiao Liu

Daniel R Queen

Glenn Jernigan

Thomas H Metcalf

Matthew R Abernathy

A hydrogen-free amorphous dielectric insulating film having a high material density and a low density of tunneling states. The film is prepared by deposition of a dielectric material on a substrate having a high substrate temperature Tunder high vacuum and at a controlled low deposition rate. In one embodiment, the film is amorphous silicon while in another embodiment the film is amorphous germanium.

Hydrogen free amorphous silicon as insulating dielectric material for superconducting quantum bits

A hydrogen-free amorphous dielectric insulating film having a high material density and a low density of tunneling states is provided. The film is prepared by e-beam deposition of a dielectric material on a substrate having a high substrate temperature Tunder high vacuum and at a low deposition rate. In an exemplary embodiment, the film is amorphous silicon having a density greater than about 2.18 g/cmand a hydrogen content of less than about 0.1%, prepared by e-beam deposition at a rate of about 0.1 nm/sec on a substrate having T=400&#xb0; C. under a vacuum pressure of 1&#xd7;10Torr.

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Berkeley, CA, United States of America

Frances Hellman