L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des

Softal Electronic Gmbh

Francedillaois Coeuret

Dominique Jouvaud

Pascal Bouard

Eckhard Prinz

Frank Slootman

Jean-Christophe Rostaing

Michel Moisan

Thierry Sindzingre

Stephane Rabia

Claude De Saint Etienne

A process for treating perfluorinated and/or hydrofluorocarbon gases, comprising the steps of

Process and apparatus for the treatment of perfluorinated and

A product substrate coated with a uniform deposit of silicon oxide created by subjecting the substrate to an electrical discharge with a dielectric barrier in the presence of a controlled atmosphere containing a silane and an oxidizing gas, the atmosphere being at a pressure higher than 10,000 Pa, and wherein the atmosphere is maintained in the immediate vicinity of an electrode in the region where the electrical discharge is produced and further wherein any entrainment of oxygen other than that forming part of the atmosphere in the region is prevented.

Silicon oxide on a substrate

Method and device for forming an excited gaseous atmosphere lacking

A device for creating a deposit of silicon oxide on a traveling solid substrate, wherein the substrate is subjected to an electrical discharge with a dielectric barrier in the presence of a controlled atmosphere containing a silane and an oxidizing gas, the atmosphere being at a pressure higher than 10,000 Pa, and wherein the atmosphere is maintained in the immediate vicinity of an electrode in the region where the electrical discharge is produced and further wherein any entrainment of oxygen other than that forming part of the atmosphere in the region is prevented.

Device for creating a deposit of silicon oxide on a traveling solid

According to the process the substrate (2) is subjected to an electrical discharge with a dielectric barrier, for example a discharge in the presence of an atmosphere containing a silane, an oxidizing gas, NO, N.sub.2 O, CO.sub.2 or O.sub.2, in particular, and a neutral carrier gas such as nitrogen or argon. A controlled atmosphere containing the silane and the oxidizing gas is maintained in the immediate vicinity of the electrode, around the electrode (6) employed for the electrical discharge, while avoiding the process being perturbed by atmospheric air entrained, for example, by the substrate (2) as it travels (3).

Process for creating a deposit of silicon oxide on a traveling solid

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Guyancourt, France

Francedillaois Coeuret