Alcatel

Alcatel N.v.

Alcatel Alsthom Compagnie Generale D'electricite

Francedillaois Brillouet

Leon Goldstein

Joel Jacquet

Antonina Plais

Paul Salet

Hans Bissessur

Jean-Louis Gentner

Alain Bodere

Catherine Graver

Cathrine Fortin

Jean Luc Lafragette

Jean Louis Gentner

An epitaxial deposition process is used to deposit materials that can be crystallized lattice matched to gallium arsenide onto an indium phosphide crystalline wafer. A material of this kind forms a metamorphic layer. Metamorphic layers of this kind constitute two semiconductor Bragg mirrors to form resonant cavities of surface emitting lasers of a matrix. This matrix is consolidated by a silicon support. Applications include optical telecommunications.

Process for fabricating a semiconductor opto-electronic component and

A semiconductor Bragg reflector and to a method of fabricating it. The reflector comprises a plurality of stacked layers on a substrate of a III-V type material, one of the stacked layers forming a holographic grating. The layer forming the grating comprises an alternating succession of air pockets and of III-V type material. Such a reflector is particularly suitable for use in laser devices.

Semiconductor Bragg reflector and a method of fabricating said reflector

In a method of fabricating a surface emitting semiconductor layer, to achieve good electrical confinement and good flatness of the mirrors delimiting the resonant cavity of the laser, an electrical confinement layer is made by growing a localized aluminum alloy layer on the active layer, except for an opening area on top of which the mirror is to be formed. After epitaxial regrowth, the alloy layer is oxidized laterally. Applications include the fabrication of semiconductor lasers on III-V substrates such as InP and GaAs.

Method of fabricating a surface emitting semiconductor laser

A semiconductor photonic diplex transceiver includes a laser to generate a first optical signal having a certain wavelength and a photodetector to detect a second optical signal having another wavelength. The diplex transceiver also includes an absorber of the first signal disposed between the laser and the detector which form integral parts of an optical waveguide. The laser generates the first signal in the form of a continuous wave and is disposed between the absorber and a selective modulator of the first signal. This reduces the problems of optical and electrical crosstalk between the transmit and receive functions. Applications include user premises optical fiber transmit/receive equipments.

Photonic diplex transceiver

Growing community of inventors

Clamart, France

Francedillaois Brillouet