European Community (Ec)

European Community

Fran&ccedil;ois Rossi

Pascal Colpo

Roland Ernst

Jean-Fran&ccedil;ois Daviet

The plasma processing apparatus comprises a plasma chamber ( ) bounded, on at least one side thereof, by an electrically conductive wall ( ), said electrically conductive wall comprising one or several apertures ( ) for interrupting a current path through said wall, external electromagnetic means ( ) for supplying electromagnetic energy into the plasma chamber through the electrically conductive wall, thereby generating a plasma inside said chamber, and sealing means for sealing the apertures. The apparatus is characterised in that the sealing means comprises one or more electrically conductive enclosure elements which are electrically insulated from the electrically conductive wall.

Plasma processing apparatus with an electrically conductive wall

An apparatus configured to generate a time-varying magnetic field through a field admission window of a plasma processing chamber to create or sustain a plasma within the chamber by inductive coupling. The apparatus includes a magnetic core presenting a pole face structure,&mdash;an inductor means associated with the magnetic core, arranged to generate a time-varying magnetic field through the pole face structure, and&mdash;a device for injecting gas into the chamber and through the chamber and through the magnetic core.

Uniform gas distribution in large area plasma source

The apparatus for plasma treatment of a non-conductive hollow substrate ( ), comprises a plasma chamber ( ) provided with two oppositely facing field admission windows ( ), and first and second opposite coil arrangements ( ) located on an outer surface ( ) of the first and second windows respectively. The first and second coil arrangements being connected to power supply means ( ) such that a current (I) of a same direction flows simultaneously in the first and second coil arrangements. The two coil arrangements ( ) induce through the substrate a magnetic flux ( ) transversal and perpendicular to a substrate depth (L) for generating an electrical field in the substrate plan.

Method and apparatus for inductively coupled plasma treatment

A plasma processing apparatus comprises a processing chamber having at least one opening for receiving field energy by inductive coupling, and at least one field energy source arranged to induce the field energy into the chamber via the corresponding opening. The field energy source comprises an inductor device associated with a magnetic core. The magnetic core forms a closure and gas seal for the corresponding opening.

Growing community of inventors

Biandronno, Italy

François Rossi

Growing community of inventors

Biandronno, Italy

Fran&ccedil;ois Rossi

François Rossi