United Microelectronics Corp.

Fong-Lung Chuang

Shin-Chi Chen

Chih-Yueh Li

Chin-Cheng Chien

Shui-Yen Lu

Tien-Wei Yu

Chin-I Liao

Yuan-Chi Pai

Kuan-Yu Lin

I-Ming Lai

A method for manufacturing a semiconductor device is provided. A substrate having a first gate and a second gate respectively formed in a first region and a second region is provided. An underlayer is formed on the substrate to cover the first gate in the first region and the second gate in the second region. A patterned mask with a predetermined thickness is formed on the underlayer in the first region. The underlayer corresponding to the second gate in the second region is removed by the patterned mask to expose the second gate, wherein the underlayer corresponding to the first gate in the first region is partially consumed to expose part of the first gate.

Method for manufacturing semiconductor device

A method for fabricating a compound semiconductor epitaxial structure includes the following steps. Firstly, a first compound epitaxial layer is formed on a substrate. Then, a continuous epitaxial deposition process is performed to form a second compound epitaxial layer on the first compound epitaxial layer, so that the second compound epitaxial layer has a linearly-decreased concentration gradient of metal. Afterwards, a semiconductor material layer is formed on the second compound epitaxial layer.

Compound semiconductor epitaxial structure and method for fabricating the same

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Hsinchu, Taiwan

Fong-Lung Chuang