International Business Machines Corporation

Folkert Horst

Bert Jan Offrein

Roger F Dangel

Antonio La Porta

Tobias Lamprecht

Jens Hofrichter

Ibrahim Murat Soganci

Gian-Luca Bona

Nikolaj Moll

Laurent A Dellmann

Marc Seifried

Casimer M DeCusatis

Russell Alan Budd

Hugo Eric Rothuizen

Lukas Czornomaz

Jean Fompeyrine

Stefan Abel

Daniel S Jubin

Roland Germann

Dorothea W Wiesmann

Felix Holzner

Herwig Hahn

Peter Bloechl

Huub L Salemink

Valeria Bragaglia

Utz Herwig Hahn

Philip Paul

Pascal Stark

Urs H Bapst

Lorenz K Muller

Christoph Berger

Christian W J Berendsen

Ilana Massarek

Gian Luca Bona

A method of processing data and related apparatuses. The method relies on an optical finite impulse response (FIR) filter. This optical FIR filter comprises several delay stages having weights set in accordance with parameters of a transformation to be applied by the optical FIR filter. Each of the delay stages is configured to impose a delay matched to a given input data period corresponding to a given input sample rate. According to the method, an optical signal is coupled into the optical FIR filter. The optical signal carries a data stream of input samples encoded at the given input sample rate; the data stream represents the data to be processed. Next, output samples are collected from an output data stream carried by an output optical signal obtained in output of the optical FIR filter. A set of output samples are obtained, which are representative of processed data.

Convolutions with optical finite impulse response filters

An electrical memristive device has a layer structure. The layer structure comprises two electrodes and a bilayer material arrangement that connects the two electrodes. The bilayer material arrangement may, for example, be sandwiched by the two electrodes, in direct contact therewith. The bilayer material arrangement includes an HfOlayer, where 1.3±0.1≤y<1.9±0.1, as well as a WOlayer in direct contact with the HfOlayer, where 2.5±0.1≤x<2.9±0.1. The bilayer arrangement involves sub-stoichiometric layers of HfOand WO, where the WOlayer may advantageously have a polycrystalline structure in the monoclinic phase, while the HfOlayer is preferably amorphous.

Electrical memristive devices based on bilayer arrangements of HfOand WO

A method, system, and computer program product for using photorefractive material for analog optic storage and other applications of optical neuromorphic systems. The method may include coupling electromagnetic radiation into a first optical input and a second optical input, where the first optical input and the second optical input are part of an integrated optical device, the integrated optical device including: a first optical mode coupler connected to a first pair of optical ports including a first optical input and output; a second optical mode coupler connected to a second pair of optical ports including a second optical input and output, and the first optical mode coupler connected to the second optical mode coupler using a pair of arms (including a photorefractive material). The method may also include obtaining an optical interference pattern in the photorefractive material of each arm of the integrated optical device.

Analog optic memory and signal processing

Aspects of the present disclosure are directed to a photorefractive layer stack. A plurality of layers are stacked along in a stacking direction and designed so as to enable a photorefractive response. That is, a refractive index of the plurality of layers modulates in response to illuminating the plurality of layers with an optical pattern of modulated intensity. A plurality of electrically insulated areas are arranged in a plane perpendicular to the stacking direction. The plurality of electrically insulated areas are optically homogenous and prevent lateral diffusion between any two electrically insulated areas of the plurality of electrically insulated areas.

Structured photorefractive layer stack

The present invention is notably directed to an electro-optical device. This device has a layer structure, which comprises a stack of III-V semiconductor gain materials, an n-doped layer and a p-doped layer. The III-V materials are stacked along a stacking direction z, which is perpendicular to a main plane of the stack. The n-doped layer extends essentially parallel to the main plane of the stack, on one side thereof. The p-doped layer too extends essentially parallel to this main plane, but on another side thereof. A median vertical plane can be defined in the layer structure, which plane is parallel to the stacking direction z and perpendicular to the main plane of the stack. Now, the device further comprises two sets of ohmic contacts, wherein the ohmic contacts of each set are configured for vertical current injection in the stack of III-V semiconductor gain materials.

Electro-optical device with asymmetric, vertical current injection ohmic contacts

An integrated optical circuit for holographic information processing is disclosed. The optical circuit comprises a photorefractive medium and two transmitter arrays. The transmitter arrays are adapted for locally changing the refractive index of the photorefractive medium for holographic encoding of the information in a working plane of the photorefractive medium by transmitting light via optical paths into the photorefractive medium such that an interference pattern is generated in the working plane. The optical paths and the working plane are arranged in a single optical plane.

Integrated optical circuit for holographic information processing

A hybrid III-V on silicon laser device includes a layer structure, with a stack of III-V semiconductor gain materials, a silicon waveguide core and a cladding structure. The semiconductor gain materials stack is along a stacking direction, which is perpendicular to a main plane of the stack. The silicon waveguide core extends along a longitudinal direction, parallel to the main plane. The cladding structure extends between said waveguide core and the stack. The device further comprises an optical coupling structure formed in the layer structure. This coupling structure is designed: 1) to allow a hybrid-mode optical coupling of radiation between the stack of III-V semiconductor gain materials and the tapered waveguide core; and 2) to favor a coupling of a fundamental transverse optical mode of said radiation over a coupling of one or more higher-order transverse optical modes of said radiation from the stack into the waveguide core.

Hybrid III-V on silicon laser device with transverse mode filter

An optical amplifier device includes: an optical waveguide core; an active gain material layer stack; and a dielectric material between the active gain material layer stack and the optical waveguide core. The optical waveguide core includes an input portion, a middle portion, an output portion and tapers. The middle portion is connected to the input and output portions via the tapers. The tapers widen outwardly, whereby the middle portion has an effective refractive index that is smaller than an effective refractive index of any of the input and output portions. The active gain material layer stack includes III-V semiconductor material layers having different refractive indices so as to possess an effective refractive index that is larger than the effective refractive index of the middle portion. The active gain material layer stack extends relative to a subsection of the optical waveguide core that includes the middle portion and tapers.

Optical amplifier devices and silicon photonic circuit devices comprising such optical amplifier devices

An apparatus includes an optical adaptor having monolithically integrated optical elements and first micro-mechanical features, the latter defining at least a first horizontal reference surface and a first vertical reference surface; wherein the first horizontal reference surface is perpendicular to an optical plane, the latter being perpendicular the optical axis of the optical elements; and wherein the first vertical reference surface is perpendicular to the first horizontal reference surface and parallel to the optical axis.

Arrangement of photonic chip and optical adaptor for coupling optical signals

A method for aligning optical components comprised in an optical component assembly and optical waveguides comprised in an optical waveguide assembly according to a common optical axis and by using an adapter includes providing the optical component assembly with a first alignment structure comprising a cavity designed according to the position of the optical components within the optical component assembly; providing an adapter presenting a base surface comprising a first step structure; providing the optical waveguide assembly with a second alignment structure comprising a distinct step structure designed according to the position of the waveguides within the waveguides assembly; and positioning the optical component assembly, the optical waveguide assembly and the adapter, so that a sidewall of the cavity and the distinct step structure are put in contact with a sidewall of the first step structure.

High-precision passive alignment of optical components with optical waveguides using a common adapter

A method for fabricating an optical waveguide includes setting, on a lower cladding of an optical waveguide, a light-reflecting feature and at least one waveguide core distinct from the reflecting feature. An upper cladding is applied that embeds both the light-reflecting feature and the waveguide core.

Optical waveguide with embedded light-reflecting feature and method for fabricating the same

An apparatus and method directed to a scanning probe microscopy cantilever. The apparatus includes body and an electromagnetic sensor having a detectable electromagnetic property varying upon deformation of the body. The method includes scanning the surface of a material with the cantilever, such that the body of the cantilever undergoes deformations and detecting the electromagnetic property varying upon deformation of the body of the cantilever.

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Zurich, Switzerland

Folkert Horst