Texas Instruments Corporation

Floyd F Schemmel

Richard Thorne

George Reeves

Troy W Hoehner

An apparatus and method for automatically detecting defects on silicon dies on silicon wafers comprising a silicon wafer acquisition system () and a computer () connected to said silicon wafer image acquisition system (), wherein said computer () automatically aligns a silicon wafer (), calibrates the image acquisition system (), analyzes die images by determining a statistical die model from a plurality of dies, and compares the statistical die model to silicon die images to determine if the silicon dies have surface defects, is disclosed.

Apparatus and method for automatically detecting defects on silicon dies on silicon wafers

A system for determining a position error in a wafer handling device includes a control module, an image acquisition module, and an image analysis module. The control module moves a workpiece having one or more reference marks, and the image acquisition module captures an image of at least one reference mark. The image analysis module, which is coupled to the image acquisition module, compares the captured image to stored target information to determine a position error.

System and method for determining a position error in a wafer handling device

An apparatus and method for automatically detecting defects on silicon dies on silicon wafers comprising a silicon wafer acquisition system ( ) and a computer ( ) connected to said silicon wafer image acquisition system ( ), wherein said computer ( ) automatically aligns a silicon wafer ( ), calibrates the image acquisition system ( ), analyzes die images by determining a statistical die model from a plurality of dies, and compares the statistical die model to silicon die images to determine if the silicon dies have surface defects, is disclosed.

An apparatus and method for detecting defects on silicon dies on a silicon wafer (,) comprising an image acquisition system (,) and a computer (,) that determines a statistical die model by analyzing a random selection of dies (,) within a die matrix (,) and compares the statistical die model to matrices of silicon dies (,) to determine which silicon dies (,) have surface defects, is disclosed.

Apparatus for detecting defective integrated circuit dies in wafer form

An apparatus and method for detecting defects on silicon dies on a silicon wafer (16) comprising an image acquisition system (10) and a computer (32) that determines a statistical die model by analyzing a random selection of dies (42) within a die matrix (37) and compares the statistical die model to matrices of silicon dies (38) to determine which silicon dies (38) have surface defects, is disclosed.

Apparatus and method for detecting defects on silicon dies on a silicon

An adjustable probe to be utilized in probe card technology during the multiprobe electrical testing of integrated circuits. The adjustable probe includes a pair of slots for expansion/contraction and adjustment to obtain a high degree of planarization and placement accuracy of the probe needle.

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Sherman, TX, United States of America

Floyd F Schemmel