Infineon Technologies LLC

Karlsruher Institut Fur Technologie

Vision Electric Super Conductors Gmbh

Florian Schreiner

Steffen Elschner

Sergey Ostrikov

Jörg Brand

Wolfgang Reiser

Claus Hanebeck

Viktor Manuel Rodriguez Zermeno

Andrej Kudymov

Stefan Huwer

Severin Strauss

A storage device can include at least one nonvolatile (NV) memory array that includes a first section having a first physical address range, and a second section having a second physical address range. A nonvolatile fault indication can be set to at least a fault state or a no-fault state. A memory watchdog circuit configured to set the fault indication to the fault state in response to an expiration of a predetermined watchdog period, the watchdog period being reset in response to a defer indication. An address mapping circuit can be configured to, in response to the fault indication having the no fault state, mapping input addresses to the first physical addresses range, and in response to the fault indication having the fault state, mapping the same input addresses to the second physical address range. Corresponding methods and systems are also disclosed.

Nonvolatile memory devices, systems and methods for fast, secure, resilient system boot

Growing community of inventors

Grasbrunn, Germany

Florian Schreiner