Max-planck-gesellschaft Zur F&#xf6;rderung Der Wissenschaften E. V.

Florian Schopper

Rainer Richter

Johannes Treis

Alexander Bähr

Jelena Ninkovic

Peter Lechner

Alexander Baehr

The invention relates to a DEPFET comprising: a semiconductor substrate () of a first conduction type, which has a first main surface () and a second main surface (), which are opposite one another; a source terminal region () of a second conduction type on the first main surface (); a drain terminal region () of a second conduction type; a channel region (), which is arranged between the source terminal region () and the drain terminal region (); a gate electrode (), which is separated from the channel region () by a gate insulator (); a rear activation region () of a second conduction type, which is formed on the second main surface (); and a substrate doping increase region () of a first conduction type, which is formed at least under the source terminal region () and under the channel region (), the substrate doping increase region () having a signal charge control region () of the first conduction type below the gate electrode (), in which signal charge control region the effective doping dose has a higher value than at other points of the substrate doping increase region () below the gate electrode.

DEPFET transistor

An avalanche photodiode array for detecting electromagnetic radiation comprises: a semiconductor substrate () having a first main surface () and a second main surface (), which are opposite one another, a plurality of n-doped anode regions () formed at the first main surface () and separated from one another by pixel isolation regions (), a p-doped cathode region () arranged at the second main surface () opposite the anode regions, a drift region () between the plurality of anode regions () and the cathode region (), and a p-doped multiplication layer () arranged below the plurality of anode regions () and below the pixel isolation regions (), and is characterized by an n-doped field reduction layer () arranged below the plurality of anode regions () and the pixel isolation regions () and above the multiplication layer ().

Avalanche photodiode array

DEPFET transistor and method of manufacturing a DEPFET transistor

The invention concerns a detector arrangement for detection of radiation, in particular particle radiation or electromagnetic radiation, with a semi-conductor detector with several pixels for detection of the radiation. It is proposed that the individual pixels each have a first subpixel () and a second subpixel (). The semi-conductor detector can be switched between a first collection state, in which the first subpixel () is sensitive and the second subpixel () is insensitive so that radiation-generated signal charge carriers are substantially collected only in the first subpixel (), and a second collection state in which the second subpixel () is sensitive and the first subpixel () is insensitive so that the radiation-generated signal charge carriers are collected substantially only in the second subpixel (). The invention furthermore concerns a corresponding operating method and detector arrangements based on the same concept with a higher number of subpixels per pixel.

Detector arrangement and corresponding operating method wherein the detector is a semi-conductor detector which is switchable between collection states with selected subpixel sensitivity

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Munich, Germany

Florian Schopper