Infineon Technologies Ag

Robert Boschgmbh

Florian Schoen

Bernhard Winkler

Mohsin Nawaz

Wolfgang Raberg

Markus Loehndorf

Werner Weber

Bernhard Gehl

Mihail Sararoiu

Horst Theuss

Thomas Buck

Torsten Kramer

Robert Gruenberger

Christian Lemier

A sensor element for thermal anemometry includes a semiconductor substrate and a thin-film diaphragm attached to the semiconductor substrate and having a front side and a rear side. A resistive heating element and a temperature-dependent resistor are attached to the front side of the thin-film diaphragm. In the area of the rear side of the thin-film diaphragm, the semiconductor substrate has a first recess. A silicon layer including a recess which merges with the first recess of the semiconductor substrate is located between the thin-film diaphragm and the semiconductor substrate.

Sensor element for thermal anemometry

A manufacturing method for a MEMS element, by which both a microphone including a microphone capacitor and a pressure sensor including a measuring capacitor are implemented in the MEMS structure. The components of the microphone and pressure sensor are formed in parallel but independently in the layers of the MEMS structure. The pressure sensor diaphragm is structured from a first layer, which functions as a base layer for the microphone diaphragm. The fixed counter-electrode of the measuring capacitor is structured from an electrically conductive second layer which functions as a diaphragm layer of the microphone. The fixed pressure sensor counter-element is structured from third and fourth layers. The third layer functions in the area of the microphone structure as a sacrificial layer, the thickness of which in the area of the microphone structure determines the electrode distance of the microphone capacitor. The microphone counter-element is structured from the fourth layer.

Method for manufacturing a microphone structure and a pressure sensor structure in the layer structure of a MEMS element

Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating material layer is disposed over an upper portion of the sidewall of the at least one trench in the first semiconductive material and over a portion of a top surface of the first semiconductive material proximate the sidewall. A second semiconductive material or a conductive material is disposed within the at least one trench and at least over the insulating material layer disposed over the portion of the top surface of the first semiconductive material proximate the sidewall.

Methods of manufacture MEMS devices

System and method for a microelectromechanical system (MEMS) is disclosed. A preferred embodiment comprises a first anchor region, a vibrating MEMS structure fixed to the first anchor region, a first electrode adjacent the vibrating MEMS structure, a second electrode adjacent the vibrating MEMS structure wherein the vibrating MEMS structure is arranged between the first and the second electrode.

MEMS device

A 2-chip MEMS microphone component includes: at least one first MEMS microphone structural component having at least one first microphone structure formed in the front side of the structural component; an ASIC structural component having evaluation electronics for the microphone signal of the MEMS microphone structural component; and a housing having a sound opening. The MEMS microphone structural component is mounted within the housing and above the sound opening in such a way that the rear side of the microphone structure is acted on by the sound pressure. The ASIC structural component also includes a second MEMS microphone structure whose microphone signal is fed to the evaluation electronics.

Microphone component

Embodiments are related to micro-electromechanical system (MEMS) devices, systems and methods. In one embodiment, a MEMS resonating device comprises a resonator element configured to provide timing; and at least one passive temperature compensation structure arranged on the resonator element.

MEMS resonator devices

Micro-electromechanical system (MEMS) substrates, devices, and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a workpiece having an isolation ring in a top portion thereof, and a moveable element disposed within the isolation ring.

MEMS substrates, devices, and methods of manufacture thereof

MEMS devices and methods of manufacture thereof

Resonance frequency tunable MEMS device

Embodiments of the invention are related to MEMS devices and methods. In one embodiment, a MEMS device includes a resonator element comprising a magnetic portion having a fixed magnetization, and at least one sensor element comprising a magnetoresistive portion, wherein a magnetization and a resistivity of the magnetoresistive portion vary according to a proximity of the magnetic portion.

Silicon MEMS resonator devices and methods

The invention relates to MEMS resonators. In one embodiment, an integrated resonator and sensor device includes a micro-electromechanical system (MEMS) resonator, and an anchor portion coupled to the MEMS resonator and configured to allow resonance of the MEMS resonator in a first plane of motion and movement of the MEMS resonator in a second plane of motion. In other embodiments, additional apparatuses, devices, systems and methods are disclosed.

Silicon MEMS resonators

The invention relates to MEMS devices. In one embodiment, a micro-electromechanical system (MEMS) device comprises a resonator element having a circumference, an anchor region, and a plurality of beam elements coupling the anchor region and the resonator element. Further embodiments comprise additional devices, systems and methods.

MEMS resonator devices with a plurality of mass elements formed thereon

The invention relates to MEMS devices. In one embodiment, a micro-electromechanical system (MEMS) device comprises a resonator element comprising a semiconducting material, and at least one trench formed in the resonator element and filled with a material comprising oxide. Further embodiments comprise additional devices, systems and methods.

Growing community of inventors

Munich, Germany

Florian Schoen