Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Thales

Florian Le Goff

Jean-Luc Reverchon

Axel Evirgen

A hybrid optical and/or electronic system includes a first planar structure having a first functionality and made of at least one first material, and a second planar structure having a second functionality and made of at least one second material different from the first material, the first and second planar structures being assembled by an assembly layer, at least one of the planar structures being disposed on a rigid substrate, the system comprising at least one active zone used for implementing the functionalities, and at least one neutral zone not used to implement the functionalities and disposed at the periphery of the active zone, the system also comprising recesses made in at least one neutral zone of the planar structure which is not disposed on the rigid substrate and is referred to as hollowed-out planar structure.

Hybrid optical/electronic system

A process for fabricating a hybrid optical detector, includes the steps of: assembling, via an assembly layer, on the one hand an absorbing structure and on the other hand a read-out circuit, locally etching, through the absorbing structure, the assembly layer and the read-out circuit up to the contacts, so as to form electrical via-holes, depositing a protective layer on the walls of the via-holes, producing a doped region of a second doping type different from the first doping type by diffusing a dopant into the absorbing structure through the protective layer, the region extending annularly around the via-holes so as to form a diode, depositing a metallization layer on the walls of the via-holes allowing the doped region to be electrically connected to the contact.

Method for improved manufacturing of a photodiode-based optical sensor and associated device

The invention relates to a method for manufacturing a photodetector able to operate for the photodetection of infrared electromagnetic waves, comprising a stack of thin layers placed on top of one another. The method includes obtaining a first assembly (E) of stacked layers, forming a detection assembly, comprising a first substrate layer, a photoabsorbent layer, a barrier layer and at least one contact layer, and a second assembly (E) of stacked layers forming a reading circuit, comprising at least one second substrate layer and a multiplexing layer. The first and second assemblies are glued between the contact layer of the first assembly and the multiplexing layer of the second assembly. Etching through the second assembly makes it possible to obtain a plurality of interconnect vias, then p or n doping of zones of the first contact layer of the first assembly through the interconnect vias.

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Palaiseau, France

Florian Le Goff