Friedrich-Alexander-Universitat Erlangen-Nürnberg

Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Florian Krach

Tobias Erlbacher

Daniel Waldmann

Michael Krieger

Stefan Hertel

Heiko B Weber

Johannes Jobst

In a method for producing a capacitor, a dielectric structure is generated in a trench of a semiconductor substrate. The dielectric structure includes a plurality of adjacent dielectric layers having opposing material tensions.

Capacitor and method for producing the same

An electronic device () includes a semiconductor substrate () having a front surface (), a first electrode () and a second electrode () disposed on the front surface () of the substrate (), wherein the first electrode () and the second electrode () each have at least one epitaxial graphene monolayer (). The at least one epitaxial graphene monolayer () of the first electrode () forms an ohmic contact with the substrate () and the at least one epitaxial graphene monolayer () of the second electrode () forms a Schottky barrier with the substrate ().

Electronic device

A semiconductor component () comprising a semiconductor substrate () composed of silicon carbide and comprising separate electrodes () applied thereto, said electrodes each comprising at least one monolayer of epitaxial graphene () on silicon carbide, in such a way that a current channel is formed between the electrodes () through the semiconductor substrate ().

Semiconductor component

Growing community of inventors

Nuremberg, Germany

Florian Krach