Aledia

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Florian Dupont

Bérangère Hyot

Benoît Amstatt

Marie-Françoise Armand

Ewen Henaff

Philippe Gilet

Hubert Bono

Tiphaine Dupont

Olivier Jeannin

Vincent Beix

Thomas Lacave

Jérôme Napierala

An optoelectronic device includes first and second light-emitting diodes, each LED having: a first semiconductor portion, with a first type of doping, having a wire-like shape along an axis and having side surfaces parallel to this axis; an active portion arranged at least partially on a top end of the first portion; and a second semiconductor portion, with a second type of doping, arranged at least partially on all or part of the active portion. The optoelectronic device further includes an electrically resistive layer having an electrical resistance that is higher than that of the active portion, covering at least all or part of the side surfaces of the first portion and all or part of the surface of the top end of the first portion not covered by the active portion. The resistive layers of the first and second LEDs are separated from one another.

Optoelectronic device comprising two wire-shaped light-emitting diodes each having a layer that limits the leakage currents

An optoelectronic device including a support having a rear surface and a front surface opposite each other, a plurality of nucleation conductive strips forming first polarization electrodes, an intermediate insulating layer covering the nucleation conductive strips, a plurality of diodes, each of which having a first, three-dimensional doped region and a second doped region, and a plurality of top conductive strips forming second polarization electrodes and resting on the intermediate insulating layer, each top conductive strip being disposed in such a way as to be in contact with the second doped regions of a set of diodes of which the first doped regions are in contact with different nucleation conductive strips.

Optoelectronic device comprising three-dimensional diodes

A nucleation structure for the epitaxial growth of three-dimensional semiconductor elements, including a substrate including a monocrystalline material forming a growth surface, a plurality of intermediate portions made of an intermediate crystalline material epitaxied from the growth surface and defining an upper intermediate surface, and a plurality of nucleation portions, made of a material including a transition metal forming a nucleation crystalline material, each epitaxied from the upper intermediate surface, and defining a nucleation surface suitable for the epitaxial growth of a three-dimensional semiconductor element.

Nucleation structure suitable for epitaxial growth of three-dimensional semiconductor elements

The process for growing at least one semiconductor nanowire (), said growth process comprising a step of forming, on a substrate (), a nucleation layer () for the growth of the nanowire () and a step of growth of the nanowire (). The step of formation of the nucleation layer () comprises the following steps: deposition onto the substrate () of a layer of a transition metal () chosen from Ti, V, Cr, Zr, Nb, Mo, Hf, Ta; nitridation of at least a part () of the transition metal layer so as to form a transition metal nitride layer having a surface intended for growing the nanowire ().

Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps

The electronic device comprises a substrate (), at least one semiconductor wire element () formed by a nitride of a group III material and an electroconductive layer () interposed between the substrate () and said at least one semiconductor wire element (). Said at least one semiconductor wire element () extends from said electroconductive layer (), and the electroconductive layer () comprises a carbide of zirconium or a carbide of hafnium.

Electronic device with a wire element extending from an electroconductive layer comprising zirconium carbide or hafnium carbide

The electronic device comprises a substrate (), at least one semiconductor nanowire () and a buffer layer () interposed between the substrate () and said nanowire (). The buffer layer () is at least partly formed by a transition metal nitride layer () from which extends the nanowire (), said transition metal nitride being chosen from: vanadium nitride, chromium nitride, zirconium nitride, niobium nitride, molybdenum nitride, hafnium nitride or tantalum nitride.

Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device

The optoelectronic device () comprises a substrate (), a light-emitting member () comprising an elongate element () extending in a direction forming an angle with the substrate (). An intermediate element () is interposed between the substrate () and a longitudinal end of the elongate element () closest to the substrate (). Furthermore, the substrate () is transparent to said light and the intermediate element (), transparent to said light, comprises at least one nitride of a transition metal, and has a thickness less than or equal to 9 nm.

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Grenoble, France

Florian Dupont