Stmicroelectronics (crolles 2) Sas

Stmicroelectronics S.a.

Florian Domengie

Pierre Caubet

Charles Baudot

Sylvain Guerber

Sylvain Baudot

Carlos Augusto Suarez Segovia

Aurelie Bajolet

Onintza Ros Bengoechea

A photonic integrated circuit includes an optical coupling device situated between two successive interconnection metal levels. The optical coupling device includes a first optical portion that receives an optical signal having a transverse electric component in a fundamental mode and a transverse magnetic component. A second optical portion converts the transverse magnetic component of the optical signal into a converted transverse electric component in a higher order mode. A third optical portion separates the transverse electric component from the converted transverse electric component and switches the higher order mode to the fundamental mode. A fourth optical portion transmits the transverse electric component to one waveguide and transmits the converted transverse electric component to another waveguide.

Optical coupling device with a wide bandwidth and reduced power losses

Local variability of the grain size of work function metal, as well as its crystal orientation, induces a variable work function and local variability of transistor threshold voltage. If the metal nitride for the work function metal of the transistor gate is deposited using a radio frequency physical vapor deposition, equiaxed grains are produced. The substantially equiaxed structure for the metal nitride work function metal layer (such as with TiN) reduces local variability in threshold voltage.

Process for forming a layer of equiaxed titanium nitride and a MOSFET device having a metal gate electrode including a layer of equiaxed titanium nitride

At least one MOS transistor is produced by forming a dielectric region above a substrate and forming a gate over the dielectric region. The gate is formed to include a metal gate region. Formation of the metal gate region includes: forming a layer of a first material configured to reduce an absolute value of a threshold voltage of the transistor, and configuring a part of the metal gate region so as also to form a diffusion barrier above the layer of the first material. Then, doped source and drain regions are formed using a dopant activation anneal.

Method for producing a metal-gate MOS transistor, in particular a PMOS transistor, and corresponding integrated circuit

A method for forming an aluminum titanium nitride layer on a wafer by plasma-enhanced physical vapor deposition including a first step at a radio frequency power ranging between 100 and 500 W only, and a second step at a radio frequency power ranging between 500 and 1,000 W superimposed to a D.C. power ranging between 500 and 1,000 W. An insulated gate comprising such an aluminum titanium nitride layer.

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Crolles, France

Florian Domengie