Basf Se Corporation

Polyera Corporation

Flexterra, Inc.

Florian Doetz

Marcel Kastler

Subramanian Vaidyanathan

Ashok Kumar Mishra

Hiroyoshi Noguchi

Antonio Facchetti

He Yan

Silke Annika Koehler

Zhihua Chen

Yan Zheng

Tobin Jay Marks

Shaofeng Lu

Bo Zhu

Ingolf Hennig

Jordan R Quinn

Thomas Weitz

Mi Zhou

Jiao Chongjun

Ang Sweemeng

Doi Iori

Mai Minh-Tien

Johan Sebastian Basuki

Ashoki Kumar Mishra

Disclosed herein are new semiconductor materials prepared from dithienylvinylene copolymers with aromatic or heteroaromatic &#x3c0;-conjugated systems. Such copolymers, with little or no post-deposition heat treatment, can exhibit high charge carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present disclosure can possess certain processing advantages such as improved solution-processability and low annealing temperature.

Semiconductor materials prepared from dithienylvinylene copolymers

The present invention provides semiconducting compounds, oligomers and polymers of formula wherein  The compounds, oligomers and polymers of formula of formula (1) are suitable for use in electronic devices such as organic field effect transistors.

Semiconductor materials prepared from bridged bithiazole copolymers

Phenacene compounds of formula (I) are disclosed. All the variables in the formula are the same as defined in the description. A thin film semiconductor comprising the above compounds, and a field effect transistor device, a photovoltaic device, an organic light emitting diode device and a unipolar or complementary circuit device comprising the thin film are also disclosed. 

Phenacene compounds for organic electronics

Disclosed are new semiconductor materials prepared from dithienylvinylene copolymers with aromatic or heteroaromatic &#x3c0;-conjugated systems. Such copolymers, with little or no post-deposition heat treatment, can exhibit high charge carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present teachings can possess certain processing advantages such as improved solution-processability and low annealing temperature.

Disclosed are new semiconductor materials prepared from rylene-(&#x3c0;-acceptor) copolymers. Such copolymers can exhibit high n-type carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.

Semiconductor materials prepared from rylene-(&#x3c0;-acceptor)copolymers

Provided are semiconductors prepared from an enantiomerically enriched mixture of a nitrogen-functionalized rylene bis(dicarboximide) compound. Specifically, the enantiomerically enriched mixture has unexpected electron-transport efficiency compared to the racemate or either of the enantiomers in optically pure form.

Perylene-based semiconductors and methods of preparation and use thereof

The invention concerns apolymer of the formula (I): wherein: M1 is an optionally substituted dithienophthalimide formula (II): wherein: X is N or C&#x2014;R, wherein R is H or a C-Calkyl group, R, at each occurrence, is independently selected from H, a Calkyl group, a Calkenyl group, a Chaloalkyl group, and a monocyclicor polycyclic moiety, wherein: each of the Calkyl group, the Calkenyl group, and the Chaloalkyl group can be optionally substituted with 1-10 substituents independently selected from a halogen, CN, &#x2014;NO, OH, NH, &#x2014;NH(Calkyl), N(Calkyl), &#x2014;S(O)OH, &#x2014;CHO, &#x2014;C(O)&#x2014;Calkyl, &#x2014;C(O)OH, &#x2014;C(O)&#x2014;OCalkyl, &#x2014;C(O)NH, &#x2014;C(O)NH&#x2014;Calkyl, &#x2014;C(O)N(Calkyl), &#x2014;OCalkyl, &#x2014;SiH, &#x2014;SiH(Calkyl), &#x2014;SiH(Calkyl), and &#x2014;Si(Calkyl); and the monocyclic or polycyclic moiety can be covalently bonded to the imide nitrogen via an optional linker, and can be optionally substituted with 1-5 substituentsindependently selected from a halogen, oxo, &#x2014;CN, &#x2014;NO, OH, &#x2550;C(CN), &#x2014;NH, &#x2014;NH(Calkyl), N(Calkyl), &#x2014;S(O)OH, &#x2014;CHO, &#x2014;C(O)OH, &#x2014;C(O)&#x2014;Calkyl, &#x2014;C(O)&#x2014;OCalkyl, &#x2014;C(O)NH, &#x2014;C(O)NH&#x2014;Calkyl, &#x2014;C(O)N(C, &#x2014;SiH, &#x2014;SiH(Calkyl), &#x2014;SiH(Calkyl), &#x2014;Si(Calkyl), &#x2014;O&#x2014;Calkyl, &#x2014;O&#x2014;Calkenyl, &#x2014;O&#x2014;Chaloalkyl, Calkyl, Calkenyl, Chaloalkyl, Carylalkyl, Caryloxy and Carylcarbonyl. Mis a repeating unit comprising one or more cyclic moieties; and n is an integer between 2 and 5,000. 

Dithienophthalimide semiconductor polymers

Disclosed are new semiconductor materials prepared from perylene-imide copolymers. Such polymers can exhibit high n-type carrier mobility and/or good current modulation characteristics. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.

Perylene-imide semiconductor polymers

Disclosed are new semiconductor materials prepared from dimeric perylene compounds. Such compounds can exhibit high n-type carrier mobility and/or good current modulation characteristics. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.

Semiconductor materials and methods of preparation and use thereof

Disclosed are new semiconductor materials prepared from naphthalene-imide copolymers. Such polymers can exhibit desirable electronic properties and can possess processing advantages including solution-processability and/or good stability at ambient conditions.

Naphtalene-imide semiconductor polymers

A polymer comprising repeating units A and optionally repeating units B wherein Z=S, Se, N&#x2014;R and O; W is at each occurrence independently a monocyclic or polycylic moiety optionally substituted with 1-4 Rgroups; Y, at each occurrence, is independently a divalent Calkyl group, a divalent Chaloalkyl group, or a covalent bond; c is from 1 to 6. 

Fused bithiophene-vinylene polymers

The present invention provides a polymer comprising a unit of formula and an electronic device comprising the polymer as semiconducting material.

Semiconductor materials based on thienothiophene-2,5-dione oligomers and polymers

The present invention relates to semiconducting compounds, materials prepared from such compounds, methods of preparing such compounds and semiconductor materials, as well as various compositions, composites, and devices that incorporate the compounds and semiconductor materials. The semiconducting compounds can have higher electron-transport efficiency and higher solubility in common solvents compared to related representative compounds.

Perylene semiconductors and methods of preparation and use thereof

Apparatus including a support body; an organic semiconductor composition body on the support body, &#x2014;and a first body including a hydrogenated vinylaromatic-diene block copolymer on the organic semiconductor composition body. Apparatus including a support body, &#x2014;a first body including a hydrogenated vinylaromatic-diene block copolymer on the support body; and an organic semiconductor composition body on the first body. Techniques for making an apparatus.

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Singapore, Singapore

Florian Doetz