Centre National De La Recherche Scientifique

Institut National Des Sciences Appliquees De Lyon

Consejo Superior De Investigaciones Cientificas

Universite Claude Bernard – Lyon1

Ecole Centrale De Lyon

Florian Chevalier

Dominique Tournier

Philippe Godignon

José Millan

Pierre Brosselard

The invention concerns a method for producing a field effect transistor having a trench gate comprising: &#x2014;the forming () of at least one trench () in a semi-conductive substrate () having a first type of conductivity, said substrate comprising two opposing faces called front face and rear face, &#x2014;the primary implantation () of ions having a second type of conductivity so as to implant each trench of the substrate to form an active gate area, &#x2014;the depositing () of a layer of polycrystalline silicon having the second type of conductivity on the implanted active gate area, &#x2014;the oxidation () of the layer of polycrystalline silicon, and &#x2014;the metallization () of the substrate on the front and rear faces of same in order to form active source and drain areas.

Method of producing a junction field-effect transistor (JFET)

The invention relates to a structure comprising an n-type substrate () having a bottom surface () and a top surface (), a drain (D) contacting the bottom surface () of the substrate (), a first n-type semiconductor region () having a top surface () provided with a contact area (), a source (S) contacting the contact area (), and a second p-type semiconductor region () arranged inside the first semiconductor region () and defining first and second conduction channels (C, C) between the drain and the source, characterized in that said structure comprises first and second metal gratings (G, G), each of which has a portion () contacting the first semiconductor region () so as to form a Schottky junction.

Semiconductor structure for an electronic interruptor power switch

Growing community of inventors

Saint Etienne, France

Florian Chevalier