Basf Se Corporation

Basf Corporation

Florian Blasberg

Thomas Schaub

Daniel Loeffler

Rocco Paciello

Wolfgang Rohde

Kerstin Schierle-Arndt

Hagen Wilmer

Felix Eickemeyer

Axel Kirste

Igor Shishkov

Maraike Ahlf

David Dominique Schweinfurth

Julia Strautmann

Falko Abels

Jan Spielmann

Boris Gaspar

Karl Matos

Carolin Limburg

Andreas Luz

David J Gilbert

David Johann Gilbert

Daniel LÖFFLER

The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal films comprising (a) depositing a metal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a reducing agent in the gaseous state, wherein the reducing agent is or at least partially forms at the surface of the solid substrate a carbene, a silylene or a phosphor radical.

Process for the generation of metallic films

The present invention relates to core-shell-particles, wherein the core comprises at least one metal, or a compound thereof, or a mixture of at least one metal or a compound thereof and at least one semimetal or a compound thereof, and the shell comprises at least one silicon comprising polymer, to a process for the preparation of these core-shell-particles, to the use of these core-shell-particles in an agglomeration-deagglomeration process, in particular in chemical, physical or biological test methods or separation processes, decontamination processes, water purification, recycling of electrical/electronic scrap or gravity separation, and to a process for separating at least one first material from a mixture comprising this at least one first material and at least one second material.

Silicon comprising polymer coated particles

A process of bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R, R, R, R, R, R, R, Rare independent of each other hydrogen, an alkyl group, an aryl group, or a trialkylsilyl group, R, R, R, Rare independent of each other an alkyl group, an aryl group, or a trialkylsilyl group, n is 1 or 2, M is a metal or semimetal, X is a ligand which coordinates M, and m is an integer from 0 to 3.

Process for the generation of thin inorganic films

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Frankfurt-am-Main, Germany

Florian Blasberg